Abstract
A gallium doped silicon (Si:Ga) extrinsic photoconductive detector was tested for sensitivity and quickness of response. The developmental goal for this detector material was high speed operation without compromised detectivity (D*). The high speed, p-type infrared photoconductor, with photoconductive gain less than unity, was tested at 10.5 μm to determine an experimental value for the detectivity-bandwidth product of D*f* = 3.69 × 1018 cm-Hz3/2/W. Subsequently a theoretical model taking into account the optical absorption profile and majority-carrier-transport processes within the detector was developed. It agreed with experimental data and corroborated the theory.
© 1990 Optical Society of America
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J. P. Garcia and E. L. Dereniak, "Extrinsic silicon photodetector characterization: errata," Appl. Opt. 29, 2838-2838 (1990)https://opg.optica.org/ao/abstract.cfm?uri=ao-29-19-2838
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