Abstract
Two-beam and three-beam vector interference in thin photoresist films is
used to illustrate the striking differences between s-polarized and p-polarized high-numerical-aperture
illumination. Both simulations and experiments are performed for several
cases, including undyed photoresist on silicon, dyed photoresist on silicon,
and the addition of an antireflective layer between the photoresist and the
silicon. A 0.85 numerical-aperture system is examined. The major differences
between s- and p-polarized
illumination include elliptical versus rectangular features and lower contrast
for p-polarized images.
© 1997 Optical Society of America
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