OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 36, Iss. 34 — Dec. 1, 1997
  • pp: 8944–8951

High-numerical-aperture effects in photoresist

Donis G. Flagello and Tom D. Milster  »View Author Affiliations


Applied Optics, Vol. 36, Issue 34, pp. 8944-8951 (1997)
http://dx.doi.org/10.1364/AO.36.008944


View Full Text Article

Enhanced HTML    Acrobat PDF (844 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Two-beam and three-beam vector interference in thin photoresist films is used to illustrate the striking differences between s-polarized and p-polarized high-numerical-aperture illumination. Both simulations and experiments are performed for several cases, including undyed photoresist on silicon, dyed photoresist on silicon, and the addition of an antireflective layer between the photoresist and the silicon. A 0.85 numerical-aperture system is examined. The major differences between s- and p-polarized illumination include elliptical versus rectangular features and lower contrast for p-polarized images.

© 1997 Optical Society of America

History
Original Manuscript: August 1, 1997
Revised Manuscript: August 1, 1997
Published: December 1, 1997

Citation
Donis G. Flagello and Tom D. Milster, "High-numerical-aperture effects in photoresist," Appl. Opt. 36, 8944-8951 (1997)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-36-34-8944


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. G. Owen, R. F. W. Pease, D. A. Markle, A. Grenville, R. L. Hsieh, R. von Bünau, N. I. Mauluf, “1/8 µm optical lithography,” J. Vac. Sci. Technol. B 10, 3032–3036 (1992). [CrossRef]
  2. D. G. Flagello, A. E. Rosenbluth, “Vector diffraction analysis of phase-mask imaging in photoresist films,” in Optical/Laser Microlithography, J. D. Cuthbert, ed., Proc. SPIE1927, 395–412 (1993). [CrossRef]
  3. D. G. Flagello, T. Milster, A. E. Rosenbluth, “Theory of high-NA imaging in homogeneous thin films,” J. Opt. Soc. Am. A 13, 53–64 (1996). [CrossRef]
  4. D. G. Flagello, “High numerical aperture imaging in homogeneous thin films,” Ph.D. dissertation (University of Arizona, Tucson, Ariz., 1993).
  5. Y. Uetani, M. Hanabata, A. Furuta, “Observation of internal structure of a positive photoresist image using cross-sectional exposure method,” J. Vac. Sci. Technol. B 7, 569–571 (1989). [CrossRef]
  6. D. C. LaTulipe, A. T. S. Pomerene, J. P. Simmons, D. E. Seeger, “Positive mode silylation process characterization,” Microelectron. Eng. 17, 265–268 (1992). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited