Two-beam and three-beam vector interference in thin photoresist films is used to illustrate the striking differences between s-polarized and p-polarized high-numerical-aperture illumination. Both simulations and experiments are performed for several cases, including undyed photoresist on silicon, dyed photoresist on silicon, and the addition of an antireflective layer between the photoresist and the silicon. A 0.85 numerical-aperture system is examined. The major differences between s- and p-polarized illumination include elliptical versus rectangular features and lower contrast for p-polarized images.
© 1997 Optical Society of America
Original Manuscript: August 1, 1997
Revised Manuscript: August 1, 1997
Published: December 1, 1997
Donis G. Flagello and Tom D. Milster, "High-numerical-aperture effects in photoresist," Appl. Opt. 36, 8944-8951 (1997)