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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 37, Iss. 12 — Apr. 20, 1998
  • pp: 2385–2389

Graphic analysis of the effective reflectivity of antireflection-coated films on diode facets

Xiaohong Zhou, Jianguo Chen, Bin Luo, Dayi Li, and Song Han  »View Author Affiliations


Applied Optics, Vol. 37, Issue 12, pp. 2385-2389 (1998)
http://dx.doi.org/10.1364/AO.37.002385


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Abstract

The wavelength dependence of the reflectivity of AR-coated facets and carrier density in relation to peak wavelength of the gain profile have been taken into consideration to study a one-facet AR-coated semiconductor diode laser. A graphic analysis method is developed to study cases in which analytical expressions of the reflectivity curves cannot be extracted. Results show that the upper bound of the carrier density that can be established inside the diode is generally (sometimes to a considerable degree) smaller than that determined by the claimed minimum reflectivity if the spectral width of the reflectivity curve cannot be regarded as infinite. This implies that the effective reflectivity of the AR-coated facet is generally larger than the claimed minimum reflectivity. To increase the effectiveness of AR film, it is essential to maintain tight control of the wavelength at which the reflectivity curve is minimum.

© 1998 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2020) Lasers and laser optics : Diode lasers
(140.3460) Lasers and laser optics : Lasers

History
Original Manuscript: July 7, 1997
Revised Manuscript: November 12, 1997
Published: April 20, 1998

Citation
Xiaohong Zhou, Jianguo Chen, Bin Luo, Dayi Li, and Song Han, "Graphic analysis of the effective reflectivity of antireflection-coated films on diode facets," Appl. Opt. 37, 2385-2389 (1998)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-37-12-2385


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References

  1. G. Eisenstein, G. Raybon, L. W. Stulz, “Deposition and measurements of SiOx antireflection coatings on InGaAsP injection laser facets,” IEEE J. Lightwave Technol. 6, 12–15 (1988). [CrossRef]
  2. N. A. Olsson, M. G. Oberg, L. D. Tzeng, T. Cella, “Ultra-low reflectivity 1.5 μm semiconductor laser preamplifier,” Electron. Lett. 24, 569–570 (1988). [CrossRef]
  3. B. Luo, L. Wu, J. Chen, Y. Lu, “Determination of wavelength dependence of the reflectivity at AR coated diode facets,” IEEE Photon. Technol. Lett. 5, 1279–1281 (1993). [CrossRef]
  4. C. Vassallo, “Polarisation-independent antireflection coatings for semiconductor optical amplifiers,” Electron. Lett. 24, 61–62 (1988). [CrossRef]
  5. N. K. Dutta, P. P. Deimel, “Optical properties of a GaAlAs superluminescent diode,” IEEE J. Quantum Electron. 19, 469–498 (1983). [CrossRef]
  6. J. Wang, J. Chen, Y. Hao, Y. Lu, “Additional wavelength shift of peak gain due to inhomogeneous distributions of carriers inside semiconductor lasers,” IEEE Photon. Technol. Lett. 5, 1171–1173 (1993). [CrossRef]

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