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Applied Optics

Applied Optics


  • Vol. 37, Iss. 15 — May. 20, 1998
  • pp: 3368–3371

Propagation effects in electro-optic sampling of terahertz pulses in GaAs

Markus Vossebürger, Martin Brucherseifer, Gyu Cheon Cho, Hartmut G. Roskos, and Heinrich Kurz  »View Author Affiliations

Applied Optics, Vol. 37, Issue 15, pp. 3368-3371 (1998)

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Freely propagating terahertz pulses are detected in the time domain by electro-optic sampling in bulk GaAs. We investigate the influence of dispersion of the near-infrared sampling pulse on the transients by varying the thickness of the GaAs crystal. Pronounced propagation effects are identified that originate from the frequency dependence of the phase-matching condition between the terahertz and the sampling pulse.

© 1998 Optical Society of America

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(300.6270) Spectroscopy : Spectroscopy, far infrared
(320.0320) Ultrafast optics : Ultrafast optics
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Original Manuscript: July 28, 1997
Revised Manuscript: January 26, 1998
Published: May 20, 1998

Markus Vossebürger, Martin Brucherseifer, Gyu Cheon Cho, Hartmut G. Roskos, and Heinrich Kurz, "Propagation effects in electro-optic sampling of terahertz pulses in GaAs," Appl. Opt. 37, 3368-3371 (1998)

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