We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ∼870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.
© 1999 Optical Society of America
Original Manuscript: April 12, 1999
Revised Manuscript: June 17, 1999
Published: September 20, 1999
Mark A. Holm, David Burns, Pasquale Cusumano, Allister I. Ferguson, and Martin D. Dawson, "High-power diode-pumped AlGaAs surface-emitting laser," Appl. Opt. 38, 5781-5784 (1999)