Abstract
We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ∼870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.
© 1999 Optical Society of America
Full Article | PDF ArticleMore Like This
T. D. Raymond, W. J. Alford, M. H. Crawford, and A. A. Allerman
Opt. Lett. 24(16) 1127-1129 (1999)
J. Aus der Au, S. F. Schaer, R. Paschotta, C. Hönninger, U. Keller, and M. Moser
Opt. Lett. 24(18) 1281-1283 (1999)
A. Garnache, A. A. Kachanov, F. Stoeckel, and R. Planel
Opt. Lett. 24(12) 826-828 (1999)