High-Power Diode-Pumped AlGaAs Surface-Emitting Laser
Applied Optics, Vol. 38, Issue 27, pp. 5781-5784 (1999)
http://dx.doi.org/10.1364/AO.38.005781
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Abstract
We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ~870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.6630) Lasers and laser optics : Superradiance, superfluorescence
(250.7270) Optoelectronics : Vertical emitting lasers
Citation
Mark A. Holm, David Burns, Pasquale Cusumano, Allister I. Ferguson, and Martin D. Dawson, "High-Power Diode-Pumped AlGaAs Surface-Emitting Laser," Appl. Opt. 38, 5781-5784 (1999)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-38-27-5781
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