Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High-power diode-pumped AlGaAs surface-emitting laser

Not Accessible

Your library or personal account may give you access

Abstract

We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ∼870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.

© 1999 Optical Society of America

Full Article  |  PDF Article
More Like This
Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser

T. D. Raymond, W. J. Alford, M. H. Crawford, and A. A. Allerman
Opt. Lett. 24(16) 1127-1129 (1999)

High-power diode-pumped passively mode-locked Yb:YAG lasers

J. Aus der Au, S. F. Schaer, R. Paschotta, C. Hönninger, U. Keller, and M. Moser
Opt. Lett. 24(18) 1281-1283 (1999)

High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers

A. Garnache, A. A. Kachanov, F. Stoeckel, and R. Planel
Opt. Lett. 24(12) 826-828 (1999)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (5)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved