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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 38, Iss. 30 — Oct. 20, 1999
  • pp: 6333–6336

Analytical Expression for the Hysteresis Loop Width of Bistable Tunable External Cavity Semiconductor Lasers

Jianguo Chen, Dayi Li, Yan Li, Yang Lu, and Xiaohong Zhou  »View Author Affiliations


Applied Optics, Vol. 38, Issue 30, pp. 6333-6336 (1999)
http://dx.doi.org/10.1364/AO.38.006333


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Abstract

We investigated the power-frequency bistability of a grating external cavity laser diode (ECLD), which operates in the strong feedback regime, by studying the threshold carrier density and related refractive index. The frequency width of the hysteresis loop has been expressed in an explicit analytical form in terms of the linewidth enhancement factor, and the reflectivities of the external grating reflector as well as the diode facet that faces it.

© 1999 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.1450) Nonlinear optics : Bistability

Citation
Jianguo Chen, Dayi Li, Yan Li, Yang Lu, and Xiaohong Zhou, "Analytical Expression for the Hysteresis Loop Width of Bistable Tunable External Cavity Semiconductor Lasers," Appl. Opt. 38, 6333-6336 (1999)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-38-30-6333

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