OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 39, Iss. 10 — Apr. 1, 2000
  • pp: 1611–1616

Correlation Between Optical Path Modulations and Transmittance Spectra of a-Si:H Thin Films

Barış Akaoğlu, İsmail Atılgan, and Bayram Katırcıoğlu  »View Author Affiliations


Applied Optics, Vol. 39, Issue 10, pp. 1611-1616 (2000)
http://dx.doi.org/10.1364/AO.39.001611


View Full Text Article

Acrobat PDF (127 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

The optical constants of plasma-enhanced chemical-vapor-deposited amorphous silicon (a-Si:H) thin film upon a transparent substrate are determined within the UV–visible region by measurement of the transmittance spectrum. Apart from thickness irregularities, the effects of vertical film inhomogeneities (refractive-index distribution) on the spectrum are discussed. In this respect, although consideration of any possible variation in thickness of the film within the area illuminated by the probe beam is sufficient for correcting the modulation of the extrema of interference fringes, including in the model the thin transitional regions at substrate–film and film–air interfaces might be an alternative method for understanding the overall optical behavior of the spectrum.

© 2000 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(300.6540) Spectroscopy : Spectroscopy, ultraviolet
(300.6550) Spectroscopy : Spectroscopy, visible
(310.6860) Thin films : Thin films, optical properties

Citation
Barış Akaoğlu, İsmail Atılgan, and Bayram Katırcıoğlu, "Correlation Between Optical Path Modulations and Transmittance Spectra of a-Si:H Thin Films," Appl. Opt. 39, 1611-1616 (2000)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-39-10-1611


Sort:  Author  |  Year  |  Journal  |  Reset

References

  1. S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, and C. T. Foxon, “Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index,” J. Appl. Phys. 84, 1561–1566 (1998).
  2. J. Rivory, “Characterization of inhomogeneous dielectric films by spectroscopic ellipsometry,” Thin Solid Films 313–314, 333–340 (1998).
  3. A. V. Tikhonravov, M. K. Trubetskov, and A. V. Krasilnikova, “Spectroscopic ellipsometry of slightly inhomogeneous nonabsorbing thin films with arbitrary refractive-index profiles: theoretical study,” Appl. Opt. 37, 5902–5911 (1998).
  4. K. V. Popov, A. V. Tikhonravov, J. Campmany, E. Bertran, S. Bosch, and A. Canillas, “Spectroscopic ellipsometric characterization of transparent thin film amorphous electronic materials: integrated analysis,” Thin Solid Films 313–314, 379–383 (1998).
  5. S. Callard, A. Gagnaire, and J. Joseph, “Characterization of graded refractive index silicon oxynitride thin films by spectroscopic ellipsometry,” Thin Solid Films 313–314, 384–388 (1998).
  6. K. Lamprecht, W. Papousek, and G. Leising, “Problem of ambiguity in the determination of optical constants of thin absorbing films from spectroscopic reflectance and transmittance measurements,” Appl. Opt. 36, 6364–6371 (1997).
  7. J. C. Manifacier, J. Gasiot, and J. P. Fillard, “A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film,” J. Phys. 9, 1002–1004 (1976).
  8. O. S. Heavens, Optical Properties of Thin Solid Films (Dover, New York, 1965), pp. 46–62.
  9. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. 16, 1214–1222 (1983).
  10. D. A. Minkov, “Method for determining the optical constants of a thin film on a transparent substrate,” J. Phys. D 22, 199–205 (1989).
  11. J. I. Cisneros, “Optical characterization of dielectric and semiconductor thin films by use of transmission data,” Appl. Opt. 37, 5262–5270 (1998).
  12. A. V. Tikhonravov, M. K. Trubetskov, B. T. Sullivan, and J. A. Dobrowolski, “Influence of small inhomogeneities on the spectral characteristics of single thin films,” Appl. Opt. 36, 7188–7198 (1997).
  13. R. Swanepoel, “Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films,” J. Phys. E 17, 896–903 (1984).
  14. R. Jacobsson, “Light reflection from films of continuously varying refractive index,” Prog. Opt. 2, 247–286 (1966).
  15. M. Born and E. Wolf, Principles of Optics, 4th. ed. (Pergamon, London, 1970), pp. 55–60.
  16. S. A. Furman and A. V. Tikhonravov, Basics of Optics of Multilayer Systems (Editions Frontiers, Gif-sur-Yvette, France, 1992), pp. 1–26.
  17. M. Yamaguchi and K. Morigaki, “Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon prepared by plasma deposition,” Philos. Mag. B 79, 387–405 (1999).
  18. E. C. Freeman and W. Paul, “Optical constants of rf sputtered hydrogenated amorphous Si,” Phys. Rev. B 20, 716–728 (1979).
  19. M. H. Brodsky, R. S. Title, K. Weiser, and F. D. Pettit, “Structural, optical, and electrical properties of amorphous silicon films,” Phys. Rev. B 1, 2632–2640 (1970).
  20. M. Harris, H. A. Macleod, and S. Ogura, “The relationship between optical inhomogeneity and film structure,” Thin Solid Films 57, 173–178 (1979).
  21. W. M. M. Kessels, R. J. Severans, M. C. M. Van de Sanden, and D. C. Schram, “Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H,” J. Non-Cryst. Solids 227–230, 133–137 (1998).
  22. D. Das, S. M. Iftiquar, and A. K. Barua, “Wide optical gap a-SiO:H films prepared by rf glow discharge,” J. Non-Cryst. Solids 210, 148–154 (1997).
  23. A. Masuda, K. Itoh, K. Matsuda, Y. Yonezawa, M. Kumeda, and T. Shimizu, “Nitrogen-doping effects on electrical, optical and structural properties in hydrogenated amorphous silicon,” J. Appl. Phys. 81, 6729–6737 (1997).
  24. J. R. Elmiger and M. Kunst, “Investigation of the silicon–plasma silicon nitride interface with in situ transient photoconductivity measurements,” Appl. Surf. Sci. 103, 11–18 (1996).
  25. R. Ruther, J. Livingstone, N. Dytlowski, and D. Cohen, “Improved hydrogen depth profiles with in-chamber annealing of hydrogenated amorphous silicon thin films,” J. Appl. Phys. 79, 175–178 (1996).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited