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Applied Optics

Applied Optics


  • Vol. 39, Iss. 18 — Jun. 20, 2000
  • pp: 3085–3088

Tunable extended-cavity diode laser stabilized on iodine at λ = 633 nm

Josef Lazar, Ondřej Číp, and Petr Jedlička  »View Author Affiliations

Applied Optics, Vol. 39, Issue 18, pp. 3085-3088 (2000)

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We present a tunable extended-cavity semiconductor laser, based on the Littman configuration, which has been frequency-stabilized to Doppler-free hyperfine transitions in I2. The stability was measured compared with the reference He–Ne–I2 laser system, whereas the semiconductor laser was locked on components of the P(33) 6—3 transition close enough to the reference R(127) 11—5 line to allow beat frequency counting. A relative stability of 4 × 10-12 over a 100-s integration time was achieved. The laser configuration allowed mode-hop-free tuning over a range including the P(33) 6—3 transition and the group of strong overlapping transitions R(60) 8—4, R(125) 9—4, and P(54) 8—4 with higher signal-to-noise ratio than the P(33) 6—3 located approximately 13 GHz toward lower optical frequencies.

© 2000 Optical Society of America

OCIS Codes
(120.3940) Instrumentation, measurement, and metrology : Metrology
(120.4800) Instrumentation, measurement, and metrology : Optical standards and testing
(140.2020) Lasers and laser optics : Diode lasers
(140.3600) Lasers and laser optics : Lasers, tunable
(300.1030) Spectroscopy : Absorption
(300.6260) Spectroscopy : Spectroscopy, diode lasers

Original Manuscript: August 30, 1999
Revised Manuscript: March 24, 2000
Published: June 20, 2000

Josef Lazar, Ondřej Číp, and Petr Jedlička, "Tunable extended-cavity diode laser stabilized on iodine at λ = 633 nm," Appl. Opt. 39, 3085-3088 (2000)

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