Theory of the Basic Optoelectronic Behavior of a Tunnel Diode
Applied Optics, Vol. 40, Issue 33, pp. 6086-6097 (2001)
http://dx.doi.org/10.1364/AO.40.006086
Acrobat PDF (171 KB)
Abstract
The basic behavior of a tunnel diode when it is used as an optoelectronic device is presented. It is shown that a tunnel diode can be used as an electro-optic modulator, as a device that exhibits self-induced transparency, or as a wavelength converter (for both upconversion and downconversion). The tunnel diode has optical bistability even if it is not placed inside a Fabry–Perot resonator. Numerical estimations are made for some of the parameters of interest for an optoelectronic device and are compared with those of other existing semiconductor-based optoelectronic devices. As the numerical estimates show, a tunnel diode can be a highly efficient optoelectronic device with an extremely wide area of application.
© 2001 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(230.0250) Optical devices : Optoelectronics
(230.1150) Optical devices : All-optical devices
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
Citation
Gabriel Moagăr-Poladian, "Theory of the Basic Optoelectronic Behavior of a Tunnel Diode," Appl. Opt. 40, 6086-6097 (2001)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-40-33-6086
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