Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.
© 2002 Optical Society of America
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.6000) Materials : Semiconductor materials
(300.6430) Spectroscopy : Spectroscopy, photothermal
(310.6870) Thin films : Thin films, other properties
Nibu A. George, C. P. G. Vallabhan, V. P. N. Nampoori, and P. Radhakrishnan, "Photothermal Deflection Studies of GaAs Epitaxial Layers," Appl. Opt. 41, 5179-5184 (2002)