Implication of Rapid Thermal Annealing-Induced Cracks on the Performance of Multiple-Quantum-Well Laser Diodes
Applied Optics, Vol. 42, Issue 15, pp. 2695-2701 (2003)
http://dx.doi.org/10.1364/AO.42.002695
Acrobat PDF (879 KB)
Abstract
We investigated the effects of rapid thermal annealing (RTA)-induced cracks on the diode performance fabricated with GaAs-AlGaAs microstructures. These effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The results show clearly that the density of surface cracks strongly depends on the atomic interdiffusion between the well and the barrier layers and on the quality of the dielectric caps as well. Moreover, surface-crack correlation with the RTA process and dielectric deposition parameters, and the cracking effects on diode performance were observed and analyzed in detail. The results demonstrate that diode characteristics can be greatly improved by good surface morphology. Most importantly, we explored an effective way of reducing the density of RTA-induced cracks for the dielectrics grown by plasma-enhanced chemical vapor deposition, which was beneficial for dielectric-cap quantum-well disordering.
© 2003 Optical Society of America
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.6810) Lasers and laser optics : Thermal effects
(270.3430) Quantum optics : Laser theory
(310.1860) Thin films : Deposition and fabrication
Citation
Hoshin H. Yee and Chih-Ping Yu, "Implication of Rapid Thermal Annealing-Induced Cracks on the Performance of Multiple-Quantum-Well Laser Diodes," Appl. Opt. 42, 2695-2701 (2003)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-42-15-2695
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
Related Journal Articles 
- Laser-diode interferometer with a photothermal modulation (AO)
- Application of In Situ Ellipsometry in the Fabrication of Thin-Film Optical Coatings on Semiconductors (AO)
- Saturation behavior and self-phase modulation of picosecond pulses in single-stripe and tapered semiconductor laser amplifiers (JOSAB)
- Coexistence of thermal noise and squeezing in the intensity fluctuations of small laser diodes (JOSAB)
- Phase-Locked Phase-Shifting Laser Diode Interferometer with Photothermal Modulation (AO)
Related Conference Papers
- High power ASE-free tunable laser using a Sagnac ring interferometer within the external cavity
- Highly reliable 1.3 μm AlGaInAs FP lasers with low power penalty under uncooled 10Gbps operation at 85°C
- An optical switch with quantum interference in intersubband transitions
- An optical switch with quantum interference in intersubband transitions
- The effect of barrier materials on the band lineup in 1.3µm GaAsSb QW heterostructures grown by MOCVD
- Record Low Thermal Resistance of Mode-Confined VCSELs using AlAs/AlGaAs DBRs
« Previous Article | Next Article »
OSA is a member of 