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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 42, Iss. 15 — May. 20, 2003
  • pp: 2695–2701

Implication of rapid thermal annealing-induced cracks on the performance of multiple-quantum-well laser diodes

Hoshin H. Yee and Chih-Ping Yu  »View Author Affiliations


Applied Optics, Vol. 42, Issue 15, pp. 2695-2701 (2003)
http://dx.doi.org/10.1364/AO.42.002695


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Abstract

We investigated the effects of rapid thermal annealing (RTA)-induced cracks on the diode performance fabricated with GaAs-AlGaAs microstructures. These effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The results show clearly that the density of surface cracks strongly depends on the atomic interdiffusion between the well and the barrier layers and on the quality of the dielectric caps as well. Moreover, surface-crack correlation with the RTA process and dielectric deposition parameters, and the cracking effects on diode performance were observed and analyzed in detail. The results demonstrate that diode characteristics can be greatly improved by good surface morphology. Most importantly, we explored an effective way of reducing the density of RTA-induced cracks for the dielectrics grown by plasma-enhanced chemical vapor deposition, which was beneficial for dielectric-cap quantum-well disordering.

© 2003 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.6810) Lasers and laser optics : Thermal effects
(270.3430) Quantum optics : Laser theory
(310.1860) Thin films : Deposition and fabrication

History
Original Manuscript: June 6, 2002
Revised Manuscript: November 20, 2002
Published: May 20, 2003

Citation
Hoshin H. Yee and Chih-Ping Yu, "Implication of rapid thermal annealing-induced cracks on the performance of multiple-quantum-well laser diodes," Appl. Opt. 42, 2695-2701 (2003)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-42-15-2695

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