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Applied Optics

Applied Optics


  • Vol. 42, Iss. 22 — Aug. 1, 2003
  • pp: 4415–4422

Quantum efficiency of silicon photodiodes in the near-infrared spectral range

Chris Hicks, Mark Kalatsky, Richard A. Metzler, and Alexander O. Goushcha  »View Author Affiliations

Applied Optics, Vol. 42, Issue 22, pp. 4415-4422 (2003)

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The quantum efficiency of silicon photodiodes and factors that might be responsible for the drop in quantum efficiency in the near-infrared spectral range were analyzed. It was shown that poor reflectivity from the rear surface of the die could account for a decrease in Si photodiode quantum efficiency in near-infrared spectral range by more than 20%. The photodiode quantum efficiency was modeled with an appropriate representation for the carrier-collection efficiency dependence on the die penetration depth. A corrected analytical expression for calculating the photodiode quantum efficiency is given. Some methods to improve the quantum efficiency of silicon photodiodes in near-infrared spectral range are discussed.

© 2003 Optical Society of America

OCIS Codes
(000.2190) General : Experimental physics
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(040.6070) Detectors : Solid state detectors
(160.1890) Materials : Detector materials
(160.6000) Materials : Semiconductor materials

Original Manuscript: November 21, 2002
Revised Manuscript: April 24, 2003
Published: August 1, 2003

Chris Hicks, Mark Kalatsky, Richard A. Metzler, and Alexander O. Goushcha, "Quantum efficiency of silicon photodiodes in the near-infrared spectral range," Appl. Opt. 42, 4415-4422 (2003)

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