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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 42, Iss. 28 — Oct. 1, 2003
  • pp: 5621–5626

Irradiation stability of silicon photodiodes for extreme-ultraviolet radiation

Frank Scholze, Roman Klein, and Thomas Bock  »View Author Affiliations


Applied Optics, Vol. 42, Issue 28, pp. 5621-5626 (2003)
http://dx.doi.org/10.1364/AO.42.005621


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Abstract

Photodiodes are used as easy-to-operate detectors in the extreme-ultraviolet spectral range. At the Physikalisch-Technische Bundesanstalt photodiodes are calibrated with an uncertainty of spectral responsivity of 0.3% or less. Stable photodiodes are a prerequisite for the dissemination of these high-accuracy calibrations to customers. Silicon photodiodes with different top layers were exposed to intense extreme-ultraviolet irradiation. Diodes coated with diamondlike carbon or TiSiN proved to be stable within a few percent up to a radiant exposure of 100 kJ/cm2. The changes in responsivity could be explained as being due to carbon contamination and to changes in the internal charge collection efficiency. In ultrahigh vacuum, no indication of oxidation was found.

© 2003 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(040.7190) Detectors : Ultraviolet
(120.3940) Instrumentation, measurement, and metrology : Metrology
(120.5630) Instrumentation, measurement, and metrology : Radiometry

History
Original Manuscript: February 3, 2003
Revised Manuscript: July 2, 2003
Published: October 1, 2003

Citation
Frank Scholze, Roman Klein, and Thomas Bock, "Irradiation stability of silicon photodiodes for extreme-ultraviolet radiation," Appl. Opt. 42, 5621-5626 (2003)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-42-28-5621


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