Passively mode-locking Nd:Gd_0.5 Y_0.5 VO4 laser with an In_0.25 Ga_0.75 As absorber grown at low temperature
Applied Optics, Vol. 44, Issue 20, pp. 4384-4387 (2005)
http://dx.doi.org/10.1364/AO.44.004384
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Abstract
We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd_0.5- Y_0.5 VO4 laser by using an In_0.25 Ga_0.75 As absorber grown at low temperature (LT In_0.25 Ga_0.75 As absorber). An In_0.25 Ga_0.75 As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz.
© 2005 Optical Society of America
OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3530) Lasers and laser optics : Lasers, neodymium
(140.4050) Lasers and laser optics : Mode-locked lasers
(160.6000) Materials : Semiconductor materials
Citation
Yong-Gang Wang, Xiao-Yu Ma, Ya-Xian Fan, and Hui-Tian Wang, "Passively mode-locking Nd:Gd_0.5 Y_0.5 VO4 laser with an In_0.25 Ga_0.75 As absorber grown at low temperature," Appl. Opt. 44, 4384-4387 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-20-4384
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