\text{GaInAsSb}/\text{GaAlAsSb}/\text{GaSb} distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3\text{\hspace{0.17em} μm} with a side-mode suppression ratio greater than \text{25 \hspace{0.17em} dB} and as great as \text{10 \hspace{0.17em} mW} of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than \text{220 \hspace{0.17em} GHz} of continuous tuning by temperature or current. The direct absorption of {\text{CH}}_{\text{4}} is demonstrated to be possible with high spectral selectivity.