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Reflectance measurements and optical constants in the extreme ultraviolet–vacuum ultraviolet regions for SiC with a different CSi ratio

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Abstract

Reflectance versus incidence angle measurements have been performed from 5  to 152  nm on samples of SiC with a different C∕Si ratio deposited with rf magnetron sputtering. The optical constants of the material at different wavelengths have been determined by using a curve-fitting technique of reflectance values versus incidence angle. Complementary measurements of the incident beam polarization, film thickness, surface roughness, and stoichiometry were performed to complete the analysis of the samples.

© 2006 Optical Society of America

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