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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 2 — Jan. 10, 2007
  • pp: 239–242

InGaAs quantum-well saturable absorbers for a diode-pumped passively Q -switched Nd:YAG laser at 1123 nm

J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y.-F. Chen, and K. F. Huang  »View Author Affiliations

Applied Optics, Vol. 46, Issue 2, pp. 239-242 (2007)

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A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123   nm . With an incident pump power of 16   W , an average output power of 3 .1   W with a Q-switched pulse width of 77   ns at a pulse repetition rate of 100   kHz was obtained.

© 2007 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 2, 2006
Manuscript Accepted: September 1, 2006

J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y.-F. Chen, and K. F. Huang, "InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Opt. 46, 239-242 (2007)

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