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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 46, Iss. 2 — Jan. 10, 2007
  • pp: 239–242

InGaAs quantum-well saturable absorbers for a diode-pumped passively Q -switched Nd:YAG laser at 1123 nm

J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y.-F. Chen, and K. F. Huang  »View Author Affiliations


Applied Optics, Vol. 46, Issue 2, pp. 239-242 (2007)
http://dx.doi.org/10.1364/AO.46.000239


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Abstract

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123   nm . With an incident pump power of 16   W , an average output power of 3 .1   W with a Q-switched pulse width of 77   ns at a pulse repetition rate of 100   kHz was obtained.

© 2007 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 2, 2006
Manuscript Accepted: September 1, 2006

Citation
J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y.-F. Chen, and K. F. Huang, "InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Opt. 46, 239-242 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-2-239


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References

  1. W. Koechner, Solid-State Laser Engineering, Vol. 1 of Optical Sciences, 5th ed. (Springer, 1999).
  2. Y. Kaneda, M. Oka, H. Masuda, and S. Kubota, "7.6 W of continuous-wave radiation in a TEM00 mode from a laser-diode end-pumped Nd:YAG laser," Opt. Lett. 17, 1003-1005 (1992). [CrossRef] [PubMed]
  3. T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997). [CrossRef]
  4. N. Moore, W. A. Clarkson, D. C. Hanna, S. Lehmann, and J. Bösenberg, "Efficient operation of a diode-bar-pumped Nd:YAG laser on the low-gain 1123-nm line," Appl. Opt. 38, 5761-5764 (1999). [CrossRef]
  5. X. Guo, M. Chen, G. Li, B. Zhang, J. Yang, Z. Zhang, and Y. Wang, "Diode-pumped 1123-nm Nd:YAG laser," Chin. Opt. Lett. 2, 402-404 (2004).
  6. Z. Cai, M. Chen, Z. Zhang, R. Zhou, W. Wen, X. Ding, and J. Yao, "Diode end-pumped 1123-nm Nd:YAG laser with 2.6-W output power," Chin. Opt. Lett. 3, 281-282 (2005).
  7. Y. F. Chen and Y. P. Lan, "Diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Phys. B 79, 29-31 (2004). [CrossRef]
  8. Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004). [CrossRef]
  9. R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997). [CrossRef]
  10. G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, "Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers," J. Opt. Soc. Am. B 16, 376-388 (1999). [CrossRef]
  11. R. Fluck, G. Zhang, U. Keller, K. J. Weingarten, and M. Moser, "Diode-pumped passively mode-locked 1.3-μm Nd:YVO4 and Nd:YLF lasers," Opt. Lett. 21, 1378-1380 (1996). [CrossRef] [PubMed]
  12. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001). [CrossRef]
  13. S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002). [CrossRef]
  14. T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001). [CrossRef]
  15. G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001). [CrossRef]

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