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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 46, Iss. 23 — Aug. 10, 2007
  • pp: 5709–5718

Optical and electrical properties between 0.4 and 12 μm for Sn-doped In2O3 films by pulsed laser deposition and cathode sputtering

Daniel Dubreuil, Jean-Pierre Ganne, Gérard Berginc, and Frédéric Terracher  »View Author Affiliations


Applied Optics, Vol. 46, Issue 23, pp. 5709-5718 (2007)
http://dx.doi.org/10.1364/AO.46.005709


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Abstract

Optical properties of Sn-doped In 2 O 3 (ITO) have been studied in the optical range of 0.4 12 μ m . A deposition has been made on BK7 glass, magnesium fluoride, sapphire, and zinc sulfide substrates. The layers have been characterized by their optical properties, DC electrical sheet resistivity, and Hall mobility. Sheet resistivity lies in the range of 6.8 318 Ω / s q for thicknesses between 16 and 280   nm . The best carrier mobility is obtained on BK7 and sapphire substrates, up to 50 cm 2 / V   s . The material shows good infrared transparency in the 3 5 μ m range on magnesium fluoride and 0.4 4 μ m on sapphire, and it is usable for practical applications up to 1 2 μ m on zinc sulfide. Simulations have been carried out for optical indices and spectra calculations. The Drude model has been used to exploit the results in either direction: from electrical measured data to the simulation of optical spectra and indices, and from measured optical spectra to simulated optical indices and electrical parameters (mobility, carrier density). Hall mobility is considered a worthy and convenient material quality criteria for materials aimed at optics.

© 2007 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(260.3060) Physical optics : Infrared
(260.3090) Physical optics : Infrared, far
(310.6860) Thin films : Thin films, optical properties
(310.6870) Thin films : Thin films, other properties

ToC Category:
Thin Films

History
Original Manuscript: April 4, 2007
Manuscript Accepted: May 22, 2007
Published: August 8, 2007

Citation
Daniel Dubreuil, Jean-Pierre Ganne, Gérard Berginc, and Frédéric Terracher, "Optical and electrical properties between 0.4 and 12 μm for Sn-doped In2O3 films by pulsed laser deposition and cathode sputtering," Appl. Opt. 46, 5709-5718 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-23-5709


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References

  1. I. Hamberg and C. G. Granqvist, "Evaporated Sn-doped In2O3 films: basic optical properties and applications to energy-efficient windows," J. Appl. Phys. 60, R123-R159 (1986). [CrossRef]
  2. Y. Shigesato, S. Takaki, and T. Haranoh, "Electrical and structural properties of low resistivity tin-doped indium oxide films," J. Appl. Phys. 71, 3356-3364 (1992). [CrossRef]
  3. S. Vigneron, X. Castel, G. Legeay, and J. Pinel, "Propriétés des couches minces d'ITO: influence de la proportion d'oxygène," in 8èmes Journées de Caractérisation Microondes et Matériaux, La Rochelle, France, (2004), paper G3.
  4. J. C. C. Fan and F. J. Bachner, "Properties of Sn-doped In2O3 films prepared by RF sputtering," J. Electrochem. Soc. 122, 1719-1725 (1975). [CrossRef]
  5. J. C. C. Fan, "Preparation of Sn-doped In2O3 (ITO) films at low deposition temperatures by ion-beam sputtering," Appl. Phys. Lett. 34, 515-517 (1979). [CrossRef]
  6. Wen-Fa Wu and Bi-Shiou Chiou, "Properties of radio-frequency magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing," Thin Solid Films 247, 201-207 (1994). [CrossRef]
  7. J. C. C. Fan, "Sputtered films for wavelength-selective applications," Thin Solid Films 80, 125-136 (1981). [CrossRef]
  8. C. Coutal, A. Azéma, and J.-C. Roustan, "Fabrication and characterization of ITO thin films deposited by excimer laser evaporation," Thin Solid Films 288, 248-253 (1996). [CrossRef]
  9. Tze-Chiang Chen, Tso-ping Ma, R. C. Barker, and W. Hasan, "Properties and applications of infrared transparent and electrically conductive In2O3 thin film," Proc. SPIE 430, 270-273 (1983).
  10. C. F. Bohren and D. R. Huffman, "Classical Theories of Optical Constants," in Absorption and Scattering of Light by Small Particles (Wiley, 1983).
  11. R. E. Hummel, Electronic Properties of Materials (Springer Verlag, 1992).
  12. CS Developpements, 1 rue Madeleine Crenon, F-92330 Sceaux (France). E-mail: csurfdvt@aol.com.
  13. W. L. Wolfe and G. J. Zissis, The Infrared Handbook (Infrared Information Analysis Center, Environmental Research Institute of Michigan, 1989).
  14. Rohm and Haas Company Advanced Materials, 185 New Boston Street, Woburn, MA 01801.
  15. F. Hanus, A. Jardin, and L. D. Laude, "Pulsed laser deposition of high quality ITO films," Appl. Surf. Sci. 96-98, 807-810 (1996). [CrossRef]
  16. C. Kittel, Introduction to Solid State Physics, 7th ed. (Wiley, 1996).
  17. L. J. van der Pauw, "A method of measuring specific resistivitiy and Hall effect of discs of arbitrary shape," Philips Res. Rep. 13, 1-9 (1958).
  18. F. M. Smits, "Measurement of Sheet Resistivities with the Four Point Probe," Bell Syst. Tech. J. 711-718 (May 1958).
  19. R. A. Synowicki, "Spectroscopic ellipsometry characterization of indium tin oxide film microstructure and optical constants," Thin Solid Films 313-314, 394-397 (1998). [CrossRef]
  20. S. Laux, N. Kaiser, A. Zöller, R. Götzelmann, H. Lauth, and H. Bernitzki, "Room-temperaure deposition of indium tin oxide thin films with plasma ion-assisted evaporation," Thin Solid Films 335, 1-5 (1998). [CrossRef]
  21. H. El Rhaleb, E. Benamar, M. Rami, J. P. Roger, A. Hakam, and A. Ennaoui, "Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis," Appl. Surf. Sci. 201, 138-145 (2002). [CrossRef]
  22. T. Nagatomo, Y. Maruta, and O. Omoto, "Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility," Thin Solid Films 192, 17-25 (1990). [CrossRef]
  23. J. R. Bellingham, W. A. Phillips, and C. J. Adkins, "Intrinsic performance limits in transparent conducting oxides," J. Mater. Sci. Lett. 11, 263-265 (1992). [CrossRef]

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