OSA's Digital Library

Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 23 — Aug. 10, 2007
  • pp: 5974–5978

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Hisashi Masui, Natalie N. Fellows, Hitoshi Sato, Hirokuni Asamizu, Shuji Nakamura, and Steven P. DenBaars  »View Author Affiliations

Applied Optics, Vol. 46, Issue 23, pp. 5974-5978 (2007)

View Full Text Article

Enhanced HTML    Acrobat PDF (207 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



A metal layer formed on the backside of InGaN∕sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere∕air interface.

© 2007 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: April 10, 2007
Manuscript Accepted: May 30, 2007
Published: August 9, 2007

Hisashi Masui, Natalie N. Fellows, Hitoshi Sato, Hirokuni Asamizu, Shuji Nakamura, and Steven P. DenBaars, "Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes," Appl. Opt. 46, 5974-5978 (2007)

Sort:  Year  |  Journal  |  Reset  


  1. K. Bando, K. Sakano, Y. Noguchi, and Y. Shimizu, "Development of high-bright and pure-white LED lamps," J. Light Visual Environ. 22, 2-5 (1998). [CrossRef]
  2. S. J. Lee, "Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes," Opt. Eng. 45, 014601-14 (2006).
  3. Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, "Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes," Appl. Phys. Lett. 82, 2221-2223 (2003). [CrossRef]
  4. F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, "Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes," Appl. Phys. Lett. 64, 2839-2841 (1994). [CrossRef]
  5. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, "High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett. 75, 2365-2367 (1999). [CrossRef]
  6. U. Strauss, H.-J. Lugauer, A. Weimar, J. Baur, G. Brüderl, D. Eisert, F. Kühn, U. Zehnder, and V. Härle, "Progress of InGaN light emitting diodes on SiC," Phys. Status Solidi C 0, 276-279 (2002). [CrossRef]
  7. T. Fujii, A. David, Y. Gao, M. Iza, S. P. DenBaars, E. L. Hu, C. Weisbuch, and S. Nakamura, "Cone-shaped surface GaN-based light-emitting diodes," Phys. Status Solidi C 2, 2836-2840 (2005). [CrossRef]
  8. A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, and C. Weisbuch, "Photonic crystal laser lift-off GaN light-emitting diodes," Appl. Phys. Lett. 88, 133514-3 (2006). [CrossRef]
  9. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys. 41, L1431-L1433 (2002). [CrossRef]
  10. J. K. Kim, J.-Q. Xi, H. Luo, and E. Fred Schubert, "Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with A1-based omnidirectional reflector having NiZn/Ag microcontacts," Appl. Phys. Lett. 89, 141123-3 (2006). [CrossRef]
  11. E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2003), p. 120.
  12. Ref. , p. 90.
  13. C. Winnewisser, J. Schneider, M. Börsch, and H. W. Rotter, "In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation," J. Appl. Phys. 89, 3091-3094 (2001). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3
Fig. 4

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited