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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 46, Iss. 23 — Aug. 10, 2007
  • pp: 5974–5978

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Hisashi Masui, Natalie N. Fellows, Hitoshi Sato, Hirokuni Asamizu, Shuji Nakamura, and Steven P. DenBaars  »View Author Affiliations


Applied Optics, Vol. 46, Issue 23, pp. 5974-5978 (2007)
http://dx.doi.org/10.1364/AO.46.005974


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Abstract

A metal layer formed on the backside of InGaN∕sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere∕air interface.

© 2007 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: April 10, 2007
Manuscript Accepted: May 30, 2007
Published: August 9, 2007

Citation
Hisashi Masui, Natalie N. Fellows, Hitoshi Sato, Hirokuni Asamizu, Shuji Nakamura, and Steven P. DenBaars, "Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes," Appl. Opt. 46, 5974-5978 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-23-5974

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