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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 28 — Oct. 1, 2007
  • pp: 7035–7039

Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode

Zhi Yang, Benkang Chang, Jijun Zou, Jianliang Qiao, Pin Gao, Yiping Zeng, and Hui Li  »View Author Affiliations

Applied Optics, Vol. 46, Issue 28, pp. 7035-7039 (2007)

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We compared two reflection-mode negative electron affinity (NEA) GaAs photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. One sample is uniform doping, and another is gradient doping. Experimental curves of spectral response sensitivity and quantum efficiency are obtained. The thicknesses of the two cathodes are both 2.6   μm . The integrated sensitivity of the uniform doping one is 1966   μA / lm , and that of the gradient-doping one is 2421 μA / lm . The escape probability and diffusion length are fitted from the spectral response curves. For the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5   μm . For the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5 .5   μm .

© 2007 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:

Original Manuscript: April 23, 2007
Revised Manuscript: June 21, 2007
Manuscript Accepted: June 21, 2007
Published: September 27, 2007

Zhi Yang, Benkang Chang, Jijun Zou, Jianliang Qiao, Pin Gao, Yiping Zeng, and Hui Li, "Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode," Appl. Opt. 46, 7035-7039 (2007)

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