Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 μm
Applied Optics, Vol. 46, Issue 5, pp. 785-788 (2007)
http://dx.doi.org/10.1364/AO.46.000785
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Abstract
We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium,
polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and
© 2007 Optical Society of America
OCIS Codes
(160.4760) Materials : Optical properties
(160.5140) Materials : Photoconductive materials
(160.6000) Materials : Semiconductor materials
(260.5150) Physical optics : Photoconductivity
(260.5210) Physical optics : Photoionization
(300.6500) Spectroscopy : Spectroscopy, time-resolved
ToC Category:
Materials
History
Original Manuscript: July 10, 2006
Manuscript Accepted: August 18, 2006
Published: January 25, 2007
Citation
Yoshimasa Toyoda, Luis R. Elias, and William M. Yen, "Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 μm," Appl. Opt. 46, 785-788 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-5-785
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