OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 46, Iss. 5 — Feb. 10, 2007
  • pp: 789–794

Comparative study of terahertz radiation from n -InAs and n -GaAs

Dong-Feng Liu and Du Xu  »View Author Affiliations


Applied Optics, Vol. 46, Issue 5, pp. 789-794 (2007)
http://dx.doi.org/10.1364/AO.46.000789


View Full Text Article

Enhanced HTML    Acrobat PDF (676 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We have studied terahertz (THz) emissions from n-InAs and n-GaAs using an ensemble Monte Carlo method. Our simulations indicate that higher amplitude THz waves from n-InAs, compared with those from n-GaAs, result from the difference in the radiation mechanisms between these two samples and are not completely dependent on the most commonly recognized fact: lighter electron effective mass in n-InAs. The excitation-wavelength-dependent and doping-level-dependent THz emissions from n-InAs are found to be quite different from those from n-GaAs. The corresponding mechanisms are analyzed by the introduction of a weighted electric field, which is weighted by the photogenerated carrier density in a semiconductor. The simulated results are in good qualitative agreement with experimental observations from other authors.

© 2007 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(260.2110) Physical optics : Electromagnetic optics
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(320.7090) Ultrafast optics : Ultrafast lasers

ToC Category:
Ultrafast Optics

History
Original Manuscript: July 10, 2006
Manuscript Accepted: September 18, 2006
Published: January 25, 2007

Citation
Dong-Feng Liu and Du Xu, "Comparative study of terahertz radiation from n-InAs and n-GaAs," Appl. Opt. 46, 789-794 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-5-789


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. D. J. Cook, J. X. Chen, E. A. Morlino, and R. M. Hochstrasser, "Terahertz-field-induced second-harmonic generation measurements of liquid dynamics," Chem. Phys. Lett. 309, 221-228 (1999). [CrossRef]
  2. R. R. Jones, D. You, and P. H. Bucksbaum, "Ionization of Rydberg atoms by subpicosecond half-cycle electromagnetic pulses," Phys. Rev. Lett. 70, 1236-1238 (1993). [CrossRef] [PubMed]
  3. X.-C. Zhang and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys. 71, 326-338 (1992). [CrossRef]
  4. K. Liu, J. Z. Xu, T. Yuan, and X. C. Zhang, "Terahertz radiation from InAs induced by carrier diffusion and drift," Phys. Rev. B 73, 155330-155335 (2006). [CrossRef]
  5. M. B. Johnston, A. Dowd, R. Driver, E. H. Linfield, A. G. Davis, and D. M. Whittaker, "Emission of collimated THz pulses from photo-excited semiconductors," Semicond. Sci. Technol. 19, S449-S451 (2004). [CrossRef]
  6. M. B. Johnston, D. M. Whittaker, A. Corchia, A. G. Davis, and E. H. Linfield, "Simulation of terahertz generation at semiconductor surfaces," Phys. Rev. B 65, 165301 (2002). [CrossRef]
  7. R. Ascazubi, C. Shneider, I. Wilke, R. Pino, and P. S. Dutta, "Enhanced terahertz emission from impurity compensated GaSb," Phys. Rev. B 72, 045328 (2005). [CrossRef]
  8. J. L. Hughes, E. C. Camus, M. D. Fraser, C. Jagadish, and M. B. Johnston, "Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission," Phys. Rev. B 70, 235330 (2004).
  9. J. L. Hughes, E. C. Camus, and M. B. Johnston, "Simulation and optimization of terahertz emission from InGaAs and InP," Solid State Commun. 136, 595-600 (2005). [CrossRef]
  10. R. Yano, H. Gotoh, Y. Hirayama, S. Miyashita, Y. Yadoya, K. Kusuda, and M. Yamanishi, "Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs surface with increased excitation intensity," J. Appl. Phys. 95, 2141-2145 (2004). [CrossRef]
  11. P. Gu, M. Tani, S. Kono, K. Sakai, and X.-C. Zhang, "Study of terahertz radiation from InAs and InSb," J. Appl. Phys. 91, 5533-5537 (2002). [CrossRef]
  12. G.-R. Lin and C.-L. Pan, "Characterization of optically excited terahertz radiation from Arsenic-ion-implanted GaAs," Appl. Phys. B 72, 151-155 (2001).
  13. D. F. Liu and J. Y. Qin, "The effects of optical pump parameters on THz temporal waveforms from Large-Aperture Photoconductive Antenna," J. Luminescence 116, 28-34 (2006). [CrossRef]
  14. D. F. Liu and Y. Z. Tan, "Monte Carlo study of the screening effect of carriers on THz radiation from InAs with high excitation intensity," Appl. Opt. 45, 569-572 (2006). [CrossRef] [PubMed]
  15. N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, "High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristics," J. Appl. Phys. 84, 654-656 (1998). [CrossRef]
  16. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials," Rev. Mod. Phys. 55, 645-705 (1983). [CrossRef]
  17. http://www.ioffe.rssi.ru. Parameters of semiconductor physics for InAs and GaAs are from this Web site.
  18. X. Zhou and T. Y. Hsiang, "EMCUR--An ensemble Monte Carlo program for III-V compound semiconductor device modeling and simulation," Research Report No. RR-001-11-89 (University of Rochester, 1989).
  19. C. Weiss, R. Wallenstein, and R. Beigang, "Magnetic-field-enhanced gneration of THz radiation from semiconductor surfaces," Appl. Phys. Lett. 77, 4160-4162 (2000). [CrossRef]
  20. T. Hattori, S. Arai, and K. Tukamoto, "Ultrafast electron dynamics in GaAs and InP studied by time-resolved terahertz emission spectroscopy," Jpn. J. Appl. Phys. 43, 7546-7551 (2004). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited