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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 47, Iss. 10 — Apr. 1, 2008
  • pp: 1453–1456

GaN membrane metal–semiconductor–metal ultraviolet photodetector

A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Kostopoulos, M. Androulidaki, M. Kayambaki, and D. Vasilache  »View Author Affiliations


Applied Optics, Vol. 47, Issue 10, pp. 1453-1456 (2008)
http://dx.doi.org/10.1364/AO.47.001453


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Abstract

GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal–semiconductor–metal-type photodetector structure was designed and manufactured on a 2.2 μm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current ( 30 pA at 3 V ) and a maximum responsivity of 14 mA / W at a wavelength of 370 nm were obtained.

© 2008 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.7190) Detectors : Ultraviolet

ToC Category:
Detectors

History
Original Manuscript: October 18, 2007
Revised Manuscript: January 18, 2008
Published: March 27, 2008

Citation
A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Kostopoulos, M. Androulidaki, M. Kayambaki, and D. Vasilache, "GaN membrane metal-semiconductor-metal ultraviolet photodetector," Appl. Opt. 47, 1453-1456 (2008)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-47-10-1453

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