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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 48, Iss. 18 — Jun. 20, 2009
  • pp: 3302–3307

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Patrick P. Naulleau  »View Author Affiliations


Applied Optics, Vol. 48, Issue 18, pp. 3302-3307 (2009)
http://dx.doi.org/10.1364/AO.48.003302


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Abstract

As critical dimensions for leading-edge semiconductor devices shrink, the line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.

© 2009 Optical Society of America

OCIS Codes
(030.6140) Coherence and statistical optics : Speckle
(110.3960) Imaging systems : Microlithography

ToC Category:
Imaging Systems

History
Original Manuscript: March 20, 2009
Revised Manuscript: May 18, 2009
Manuscript Accepted: May 25, 2009
Published: June 10, 2009

Citation
Patrick P. Naulleau, "Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography," Appl. Opt. 48, 3302-3307 (2009)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-48-18-3302


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References

  1. P. Naulleau and G. Gallatin, “The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization,” Appl. Opt. 42, 3390-3397 (2003). [CrossRef] [PubMed]
  2. N. Beaudry and T. Milster, “Effects of mask roughness and condenser scattering in EUVL systems,” Proc. SPIE 3676, 653-662 (1999). [CrossRef]
  3. P. Naulleau, “The relevance of mask-roughness-induced printed line-edge roughness in recent and future EUV lithography tests,” Appl. Opt. 43, 4025-4032 (2004). [CrossRef] [PubMed]
  4. P. Naulleau, D. Niakoula, and G. Zhang, “System-level line-edge roughness limits in extreme ultraviolet lithography,” J. Vac. Sci. Technol. B 26, 1289-1293 (2008). [CrossRef]
  5. P. Naulleau, K. Goldberg, E. Anderson, K. Bradley, R. Delano, P. Denham, B. Gunion, B. Harteneck, B. Hoef, H. Huang, K. Jackson, G. Jones, D. Kemp, A. Liddle, R. Oort, A. Rawlins, S. Rekawa, F. Salmassi, R. Tackaberry, C. Chung, L. Hale, D. Phillion, G. Sommargren, and J. Taylor, “Status of EUV microexposure capabilities at the ALS using the 0.3-NA MET optic,” Proc. SPIE 5374, 881-891 (2004). [CrossRef]
  6. P. Naulleau, C. Anderson, J. Chiu, P. Denham, S. George, K. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, G. Jones, C. Koh, B. La Fontaine, A. Ma, W. Montgomery, D. Niakoula, J. Park, T. Wallow, and S. Wurm, “22-nm half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86, 448-455 (2009). [CrossRef]
  7. SuMMIT.
  8. P. Naulleau and G. Gallatin, “Spatial scaling metrics of mask-induced induced line-edge roughness,” J. Vac. Sci. Technol. B 26, 1903-1910 (2008). [CrossRef]
  9. International Technology Roadmap for Semiconductors, “2006 update,” http://www.itrs.net/Links/2008ITRS/Home2008.htm.

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