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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 3 — Jan. 20, 2010
  • pp: 437–441

Infrared interference coating by use of Si 3 N 4 and SiO 2 films with ion-assisted deposition

Cheng-Chung Lee and Shih-Liang Ku  »View Author Affiliations

Applied Optics, Vol. 49, Issue 3, pp. 437-441 (2010)

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Silicon nitride ( Si 3 N 4 ) and silicon dioxide ( SiO 2 ) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7 μm . The application of Si 3 N 4 and SiO 2 films on the IR interference coating is demonstrated.

© 2010 Optical Society of America

OCIS Codes
(310.1620) Thin films : Interference coatings
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties
(310.6870) Thin films : Thin films, other properties
(310.4925) Thin films : Other properties (stress, chemical, etc.)

ToC Category:
Thin Films

Original Manuscript: October 26, 2009
Revised Manuscript: December 20, 2009
Manuscript Accepted: December 21, 2009
Published: January 15, 2010

Cheng-Chung Lee and Shih-Liang Ku, "Infrared interference coating by use of Si3N4 and SiO2 films with ion-assisted deposition," Appl. Opt. 49, 437-441 (2010)

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  1. L. F. Johnson and M. B. Moran, “Compressive coatings for strengthened sapphire,” in Window and Dome Technologies and Materials VI (SPIE Press, 1999), pp. 130-141.
  2. L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006). [CrossRef]
  3. M. K. Gunde and M. Maček, “Infrared optical constants and dielectric response functions of silicon nitride and Oxynitride films,” Phys. Status Solidi A 1831, 439-449 (2001). [CrossRef]
  4. E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995). [CrossRef]
  5. V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002). [CrossRef]
  6. S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999). [CrossRef]
  7. A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001). [CrossRef]
  8. L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005). [CrossRef]
  9. M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999). [CrossRef]
  10. T. Makino, “Composition and structure control by source gas ratio in LPCVD SiNx,” J. Electrochem. Soc. 130, 450-455 (1983). [CrossRef]
  11. S. K. Ghosh, and T. K. Hatwar, “Preparation and characterization of reactively sputtered silicon nitride thin films,” Thin Solid Films 166, 359-366 (1988). [CrossRef]
  12. M. F. Lambrinos, R. Valizadeh, and J. S. Colligon, “Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering,” Appl. Opt. 35, 3620-3626 (1996). [CrossRef] [PubMed]
  13. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003). [CrossRef]
  14. N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997). [CrossRef]
  15. A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).
  16. A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996). [CrossRef]
  17. Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997). [CrossRef]
  18. B.-S. Yau and J.-L. Huang, “Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel,” Surf. Coat. Technol. 176, 290-295 (2004). [CrossRef]
  19. B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989). [CrossRef]
  20. Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005). [CrossRef]
  21. C.-C. Lee, H.-L. Chen, J.-C. Hsu, and C.-L. Tien, “Interference coatings based on synthesized silicon nitride,” Appl. Opt. 38, 2078-2082 (1999). [CrossRef]
  22. G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989). [CrossRef]
  23. S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004). [CrossRef]
  24. D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005). [CrossRef]
  25. M. K. Gunde, and B. Aleksandrov, “Infrared optical constants and roughness factor functions determination: the HTHRTR method,” Appl. Opt. 30, 3186-3196 (1991). [CrossRef] [PubMed]

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