OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 24 — Aug. 20, 2011
  • pp: 4824–4833

Characterization of the optical properties of an infrared blocked impurity band detector

S. I. Woods, S. G. Kaplan, T. M. Jung, and A. C. Carter  »View Author Affiliations


Applied Optics, Vol. 50, Issue 24, pp. 4824-4833 (2011)
http://dx.doi.org/10.1364/AO.50.004824


View Full Text Article

Enhanced HTML    Acrobat PDF (801 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Si:As blocked impurity band detectors have been partially deprocessed and measured by Fourier transform spectroscopy to determine their transmittance and reflectance at cryogenic temperatures over the wavelength range 2 μm to 40 μm . A method is presented by which the propagation constants can be extracted from an inversion of the transmittance and reflectance data. The effective propagation constants for the active layer from 2 μm to 20 μm were calculated as well as the absorption cross section of arsenic in silicon, which agrees well with previous results from the literature. The infrared absorptance of the full detector was determined, and the analytical method also provides an estimate of absorption in the active layer alone. Infrared absorptance of the active layer is compared to the quantum yield measured by photoelectric means on similar detectors. The optical methods outlined here, in conjunction with standard electronic measurements, could be used to predict the performance of such detectors from measurements of the blanket films from which they are to be fabricated.

© 2011 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.5160) Detectors : Photodetectors
(120.4530) Instrumentation, measurement, and metrology : Optical constants
(160.1890) Materials : Detector materials
(300.6340) Spectroscopy : Spectroscopy, infrared

ToC Category:
Detectors

History
Original Manuscript: February 28, 2011
Revised Manuscript: June 3, 2011
Manuscript Accepted: June 28, 2011
Published: August 16, 2011

Citation
S. I. Woods, S. G. Kaplan, T. M. Jung, and A. C. Carter, "Characterization of the optical properties of an infrared blocked impurity band detector," Appl. Opt. 50, 4824-4833 (2011)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-50-24-4824


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. M. D. Petroff and M. G. Stapelbroek, “Blocked impurity band detectors,” U.S. patent 4,568,960 (February 4, 1986).
  2. R. D. Campbell, “Characterization of the Si:As blocked impurity band (BIB) detector in Keck’s long wavelength spectrometer (LWS),” Exp. Astron. 14, 57–60 (2002). [CrossRef]
  3. A. K. Mainzer, H. Hogue, M. Stapelbroek, D. Molyneux, J. Hong, M. Werner, M. Ressler, and E. Young, “Characterization of a megapixel mid-infrared array for high background applications,” Proc. SPIE 7021, 70210T-1–70210T-6 (2008).
  4. B. L. Cardozo, E. E. Haller, L. A. Reichertz, and J. W. Beeman, “Far infrared absorption in GaAs: Te liquid phase epitaxial films,” Appl. Phys. Lett. 83 (19), 3990–3992 (2003). [CrossRef]
  5. A. C. Carter, S. R. Lorentz, T. M. Jung, B. J. Klemme, and R. U. Datla, “NIST Facility for spectral calibration of detectors: calibration of arsenic doped silicon blocked impurity band detectors,” Proc. SPIE 4028, 420–425 (2000). [CrossRef]
  6. T. M. Jung, A. C. Carter, S. R. Lorentz, and R. U. Datla, “NIST-BMDO Transfer Radiometer (BXR),” Proc. SPIE 4028, 404–410 (2000). [CrossRef]
  7. A. C. Carter, S. I. Woods, S. M. Carr, T. M. Jung, and R. U. Datla, “Absolute cryogenic radiometer and solid state trap detectors for IR power scales down to 1 pW with 0.1% uncertainty,” Metrologia 46 (4), S146–S150 (2009). [CrossRef]
  8. E. J. Iglesias, A. W. Smith, and S. G. Kaplan, “A sensitive, spatially uniform photodetector for broadband infrared spectrophotometry,” Appl. Opt. 47 (13), 2430–2436 (2008). [CrossRef] [PubMed]
  9. M. D. Petroff and M. G. Stapelbroek, “Responsivity and noise models of blocked impurity band detectors. IRIA-IRIS,” in Proceedings of the Meeting of the Specialty Group on Infrared Detectors, Volume  2 (ERIM, 1984).
  10. F. Szmulowicz, F. L. Madarsz, and J. Diller, “Temperature dependence for the figures of merit for blocked impurity band detectors,” J. Appl. Phys. 63 (11), 5583–5588 (1988). [CrossRef]
  11. J. Geist, “Infrared absorption cross section of arsenic in silicon in the impurity band region of concentration,” Appl. Opt. 28, 1193–1199 (1989). [CrossRef] [PubMed]
  12. Reference is made to commercial laboratories and products to adequately specify the experimental procedures involved. Such identification does not imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that these laboratories or products are the best for the purpose specified.
  13. M. Born and E. Wolf, Principles of Optics, 5th ed. (Pergamon, 1975), pp. 323–329.
  14. D. F. Edwards, “Silicon (Si),” in Handbook of Optical Constants of Solids, E.D.Palik, ed. (Academic, 1985) pp. 547–569.
  15. M. D. Petroff and M. G. Stapelbroek, “Spectral response, gain, and noise models for IBC detectors,” in IRIA-IRIS, Proceedings of the Meeting of the Specialty Group on Infrared Detectors (ERIM, 1985).
  16. Jon Geist (NIST), private communication.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited