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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 9 — Mar. 20, 2011
  • pp: C1–C4

Fabrication of three-dimensional autocloned photonic crystal on sapphire substrate

Hao Ming Ku, Chen Yang Huang, and Shiuh Chao  »View Author Affiliations

Applied Optics, Vol. 50, Issue 9, pp. C1-C4 (2011)

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We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta 2 O 5 / SiO 2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED) for application in manipulating the light extraction of the sapphire-based GaN LED.

© 2011 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.1860) Thin films : Deposition and fabrication
(230.5298) Optical devices : Photonic crystals
(310.6845) Thin films : Thin film devices and applications

Original Manuscript: July 26, 2010
Manuscript Accepted: August 19, 2010
Published: September 30, 2010

Hao Ming Ku, Chen Yang Huang, and Shiuh Chao, "Fabrication of three-dimensional autocloned photonic crystal on sapphire substrate," Appl. Opt. 50, C1-C4 (2011)

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