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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 9 — Mar. 20, 2011
  • pp: C210–C216

Analysis of long-term internal stress and film structure of SiO 2 optical thin films

Toshiyuki Nishikawa, Hiroi Ono, Hiroshi Murotani, Yoshitaka Iida, and Katsuhisa Okada  »View Author Affiliations

Applied Optics, Vol. 50, Issue 9, pp. C210-C216 (2011)

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Recently, the demand for durability of optical thin films, which have long been used, has been growing as the performance of optical components improves. The stress of a film is an important parameter that is related to its adhesion. The electron beam (EB) and ion-assisted deposition (IAD) methods are widely used to fabricate optical thin films. However, there are few reports on long-term internal stress, despite the importance of this issue. Here we discuss the time dependence of the stress of SiO 2 optical thin films in terms of optical characteristics in the infrared region. It was found that SiO 2 thin films prepared by the EB and IAD methods exhibited compression stress. The Si–OH molecular bond was observed at around 930 cm 1 in the Fourier transform infrared spectroscopy spectrum of the sample prepared by the EB method, which exhibited a large change in internal stress after an elapsed time. It is considered that this change in bonding was related to the decrease in the stress of the films.

© 2011 Optical Society of America

OCIS Codes
(310.1860) Thin films : Deposition and fabrication
(310.4925) Thin films : Other properties (stress, chemical, etc.)
(310.6628) Thin films : Subwavelength structures, nanostructures

Original Manuscript: August 3, 2010
Revised Manuscript: October 30, 2010
Manuscript Accepted: November 4, 2010
Published: December 13, 2010

Toshiyuki Nishikawa, Hiroi Ono, Hiroshi Murotani, Yoshitaka Iida, and Katsuhisa Okada, "Analysis of long-term internal stress and film structure of SiO2 optical thin films," Appl. Opt. 50, C210-C216 (2011)

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  1. T. Aoki, “Optical coatings and their starting materials,” Rev. Laser Eng. 24, 61–73 (1996). [CrossRef]
  2. S. Mohan and G. M. Krishna, “A review of ion beam assisted deposition of optical thin films,” Vacuum 46, 645–659 (1995). [CrossRef]
  3. K. Arai, “Time dependence of internal stress and optical characteristics of SiO2 optical thin film,” Proc. SPIE 6469, 646905 (2007). [CrossRef]
  4. T. Nishikawa, “Time dependence of internal stress and molecule structure with long-term in SiO2 optical thin film,” in Proceedings of the Sixth International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO6) (Japan Society for the Promotion of Science, 2009), pp. 239–242.
  5. Y. J. Robic and B. Rafin, “Residual stress in silicon dioxide thin films produced by ion-assisted deposition,” Thin Solid Films 290/291, 34–39 (1996). [CrossRef]
  6. C. C. Lee, C. L. Tien, and J. C. Hsu, “Internal stress and optical properties of Nb2O5 thin films deposited by ion-beam sputtering,” Appl. Opt. 41, 2043–2047 (2002). [CrossRef] [PubMed]
  7. H. C. Liu and S. P. Murarka, “Elastic and viscoelastic analysis of stress in thin films,” J. Appl. Phys 72, 3458–3468 (1992). [CrossRef]
  8. H. Leplan, J. Y. Robic, and Y. Pauleau, “Kinetics of residual stress evolution in evaporated silicon dioxide films exposed to room air,” J. Appl. Phys 79, 6926–6931 (1996). [CrossRef]
  9. W. A. Pliskin, “Comparison of properties of dielectric films deposited by various methods,” J. Vac. Sci. Technol. 14, 1064–1081 (1977). [CrossRef]
  10. K. Scherer, L. Nouvelot, P. Lacan, and R. Bosmans, “Optical and mechanical characterization of evaporated SiO2 layers. long-term evolution,” Appl. Opt. 35, 5067–5072 (1996). [CrossRef] [PubMed]
  11. I. P. Lisoviskii, V. G. Litovchenko, V. G. Lozinskii, and G. I. Steblovskii, “IR spectroscopic investigation of SiO2 film structure,” Thin Solid Films 213, 164–169 (1992). [CrossRef]
  12. A. Agarwal, K. M. Davis, and M. Tomozawa, “A simple IR spectroscopic method for determining fictive temperature of silica glasses,” J. Non-Cryst. Solids 185, 191–198 (1995). [CrossRef]
  13. S. Y. Lin, “Vibrational local modes of a-SiO2:H and variation of local modes in different local environments,” J. Appl. Phys 82, 5976–5982 (1997). [CrossRef]
  14. J. K. West and L. L. Hench, “Molecular orbital models of silica rings and their vibrational spectra,” Phys. Chem. Glasses 39, 301–304 (1998).
  15. R. Ashokan, R. Singh, V. Gopal, and M. Anandan, “Structural characterization of photochemically grown silicon dioxide films by ellipsometry and infrared studies,” J. Appl. Phys. 73, 3943–3950 (1993). [CrossRef]
  16. F. L. Galeener, “Planar rings in glasses,” Thin Solid Films 44, 1037–1040 (1982).
  17. K. Awazu, “Ablation and compaction of amorphous SiO2 irradiated with ArF excimer laser,” J. Non-Cryst. Solid. 337, 241–253 (2004). [CrossRef]
  18. K. Awazu, “Small rings in amorphous silica,” J. Appl. Phys. 74, 917–923 (2005).
  19. A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84–89 (1996). [CrossRef]
  20. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy (Physical Electronics, 1995)
  21. K. Nomura, and H. Ogawa, “Sputtering under ultraviolet light irradiation,” J. Appl. Phys 71, 1469–1474 (1992). [CrossRef]
  22. L. Yang, B. Abeles, W. Eberhardt, and H. Stasiewski, “Photoemission spectroscopy of heterojunctions of hydrogenated amorphous silicon with silicon oxide and nitride,” Phys. Rev. B 39, 3801–3816 (1989). [CrossRef]
  23. S. A. Nelson, H. D. Hailen, and R. A. Buhrman, “A structural and electrical comparison of thin films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidation,” J. Appl. Phys. 63, 5027–5035(1988). [CrossRef]
  24. K. Nomura and H. Ogawa, “SiO2 thin films deposited by reactive ion-beam sputtering under ultraviolet light irradiation,” J. Appl. Phys. 71, 1469–1474 (1992). [CrossRef]

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