Abstract

The positions of the front and rear surfaces of a silicon dioxide film with 4 μm thickness is measured with a novel and simple method in which both amplitude and phase of a sinusoidal wave signal corresponding to one optical path difference of a reflecting surface is utilized in a linear wavenumber-scanning interferometer. For this utilization, the scanning width and the position of the reference mirror are adjusted exactly to distinguish the two sinusoidal waves corresponding to the two surfaces of the film. The scanning width of the wavenumber and wavelength of the light source are $0.326\times {10}^{-3}{\mathrm{nm}}^{-1}$ and 140 nm, respectively.

©2012 Optical Society of America

Sinusoidal wavelength-scanning interferometer using an acousto-optic tunable filter for measurement of thickness and surface profile of a thin film

Hisashi Akiyama, Osami Sasaki, and Takamasa Suzuki
Opt. Express 13(25) 10066-10074 (2005)

Sinusoidal wavelength-scanning interferometric reflectometry

Osami Sasaki, Tomokazu Kuwahara, Ryohta Hara, and Takamasa Suzuki
Appl. Opt. 39(22) 3847-3853 (2000)

Signal correction by detection of scanning position in a white-light interferometer for exact surface profile measurement

Songjie Luo, Takamasa Suzuki, Osami Sasaki, Samuel Choi, Ziyang Chen, and Jixiong Pu
Appl. Opt. 58(13) 3548-3554 (2019)

Sinusoidal wavelength-scanning interferometer with a superluminescent diode for step-profile measurement

Osami Sasaki, Norihiko Murata, and Takamasa Suzuki
Appl. Opt. 39(25) 4589-4592 (2000)

Utilization of complex-valued signals in a white-light scanning interferometer for accurate measurement of a surface profile

Songjie Luo, Osami Sasaki, Ziyang Chen, and Jixiong Pu
Appl. Opt. 56(15) 4419-4425 (2017)