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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 35 — Dec. 10, 2012
  • pp: 8455–8459

Advantages of gated silicon single-photon detectors

Tommaso Lunghi, Enrico Pomarico, Claudio Barreiro, Damien Stucki, Bruno Sanguinetti, and Hugo Zbinden  »View Author Affiliations

Applied Optics, Vol. 51, Issue 35, pp. 8455-8459 (2012)

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We present a gated silicon single-photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon-detection efficiency of 45±5% at 808 nm with 2·106 dark count per nanosecond at 30 V of excess bias and 30°C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the “charge persistence” effect, whereby a detector clicks some time after having been illuminated.

© 2012 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon

ToC Category:

Original Manuscript: September 20, 2012
Revised Manuscript: November 15, 2012
Manuscript Accepted: November 15, 2012
Published: December 10, 2012

Tommaso Lunghi, Enrico Pomarico, Claudio Barreiro, Damien Stucki, Bruno Sanguinetti, and Hugo Zbinden, "Advantages of gated silicon single-photon detectors," Appl. Opt. 51, 8455-8459 (2012)

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