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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 35 — Dec. 10, 2012
  • pp: 8455–8459

Advantages of gated silicon single-photon detectors

Tommaso Lunghi, Enrico Pomarico, Claudio Barreiro, Damien Stucki, Bruno Sanguinetti, and Hugo Zbinden  »View Author Affiliations


Applied Optics, Vol. 51, Issue 35, pp. 8455-8459 (2012)
http://dx.doi.org/10.1364/AO.51.008455


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Abstract

We present a gated silicon single-photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon-detection efficiency of 45±5% at 808 nm with 2·106 dark count per nanosecond at 30 V of excess bias and 30°C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the “charge persistence” effect, whereby a detector clicks some time after having been illuminated.

© 2012 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon

ToC Category:
Detectors

History
Original Manuscript: September 20, 2012
Revised Manuscript: November 15, 2012
Manuscript Accepted: November 15, 2012
Published: December 10, 2012

Citation
Tommaso Lunghi, Enrico Pomarico, Claudio Barreiro, Damien Stucki, Bruno Sanguinetti, and Hugo Zbinden, "Advantages of gated silicon single-photon detectors," Appl. Opt. 51, 8455-8459 (2012)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-51-35-8455


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References

  1. S. Cova, M. Ghioni, A. Lotito, I. Rech, and F. Zappa, “Evolution and prospects for single-photon avalanche diodes and quenching circuits,” J. Mod. Opt. 51, 1267–1288 (2004).
  2. A. Dalla Mora, A. Tosi, F. Zappa, S. Cova, D. Contini, A. Pifferi, L. Spinelli, A. Torricelli, and R. Cubeddu, “Fast-gated single-photon avalanche diode for wide dynamic range near infrared spectroscopy,” IEEE Sel. Top. Quantum. Electron. 16, 1023–1030 (2010). [CrossRef]
  3. A. Tosi, A. Dalla Mora, F. Zappa, A. Gulinatti, D. Contini, A. Pifferi, L. Spinelli, A. Torricelli, and R. Cubeddu, “Fast-gated single-photon counting technique widens dynamic range and speeds up acquisition time in time-resolved measurements,” Opt. Express 19, 10735–10746 (2011). [CrossRef]
  4. A. Lamas-Linares, C. Simon, J. C. Howell, and D. Bouwmeester, “Experimental quantum cloning of single photons,” Science 296, 712–714 (2002). [CrossRef]
  5. N. Sangouard, B. Sanguinetti, N. Curtz, N. Gisin, R. Thew, and H. Zbinden, “Faithful entanglement swapping based on sum-frequency generation,” Phys. Rev. Lett. 106, 120403 (2011). [CrossRef]
  6. A. Dalla Mora, D. Contini, A. Pifferi, R. Cubeddu, A. Tosi, and F. Zappa, “Afterpulse-like noise limits dynamic range in time-gated applications of thin-junction silicon single-photon avalanche diode,” Appl. Phys. Lett. 100, 241111 (2012). [CrossRef]
  7. J. Zhang, R. Thew, J. D. Gautier, N. Gisin, and H. Zbinden, “Comprehensive characterization of InGaAs-InP avalanche photodiodes at 1550 nm with an active quenching ASIC,” IEEE J. Quantum. Electron. 45, 792–799 (2009). [CrossRef]
  8. P. Eraerds, M. Legré, J. Zhang, H. Zbinden, and N. Gisin, “Photon counting OTDR: advantages and limitations,” J. Lightwave Technol. 28, 952–964 (2010). [CrossRef]
  9. N. Timoney, B. Lauritzen, I. Usmani, M. Afzelius, and N. Gisin, “Atomic frequency comb memory with spin wave storage in 153Eu3+:Y2SiO5,” J. Phys. B: At. Mol. Opt. Phys. (2012) (to be published).
  10. P. P. Webb, R. J. McIntyre, and J. Conradi, “Properties of avalanche photodiodes,” RCA Rev. 35, 234–278 (1974).
  11. Y. S. Kim, Y. C. Jeong, S. Sauge, V. Makarov, and Y.-H. Kim, “Ultra-low noise single-photon detector based on Si avalanche photodiode,” Rev. Sci. Instrum. 82, 093110 (2011). [CrossRef]
  12. R. T. Thew, D. Stucki, J.-D. Gautier, H. Zbinden, and A. Rochas, “Free-running InGaAs/InP avalanche photodiode with active quenching for single photon counting at telecom wavelengths,” Appl. Phys. Lett. 91, 201114 (2007). [CrossRef]
  13. Perkin Elmer, “C30902 Series,” available at http://www.perkinelmer.com/CMSResources/Images/44-3477DTS_C30902.pdf .
  14. A. Spinelli and A. L. Lacaita, “Physics and numerical simulation of single photon avalanche diodes,” IEEE Trans. Electron. Devices 44, 1931–1943 (1997). [CrossRef]
  15. G. Ripamonti and S. Cova, “Carrier diffusion effects in the time-response of a fast photodiode,” Solid-State Electron. 28, 925–931 (1985). [CrossRef]
  16. G. Vincent, A. Chantre, and D. Bois, “Electric field effect on the thermal emission of traps in semiconductor junctions,” J. Appl. Phys. 50, 5484–5487 (1979). [CrossRef]

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