We analyze physical models accounting for deep-level conduction band transitions to describe impurity absorption spectra in tetrahedral-structured semiconductors. The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase. It was shown that the impurities provide acceptor centers with ground state energy offset by 0.3–0.6 eV from the edge of the conduction band, forming long-wave bands in the absorption spectra of the materials studied.
© 2014 Optical Society of America
Original Manuscript: November 15, 2013
Manuscript Accepted: November 29, 2013
Published: February 3, 2014
Viktor P. Makhniy, Paul P. Horley, Oksana V. Kinzerskaya, and Elena V. Stets, "Optical absorption spectra as a useful tool to find parameters of deep impurity centers in semiconductors," Appl. Opt. 53, B8-B11 (2014)