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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 53, Iss. 10 — Apr. 1, 2014
  • pp: B8–B11

Optical absorption spectra as a useful tool to find parameters of deep impurity centers in semiconductors

Viktor P. Makhniy, Paul P. Horley, Oksana V. Kinzerskaya, and Elena V. Stets  »View Author Affiliations


Applied Optics, Vol. 53, Issue 10, pp. B8-B11 (2014)
http://dx.doi.org/10.1364/AO.53.0000B8


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Abstract

We analyze physical models accounting for deep-level conduction band transitions to describe impurity absorption spectra in tetrahedral-structured semiconductors. The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase. It was shown that the impurities provide acceptor centers with ground state energy offset by 0.3–0.6 eV from the edge of the conduction band, forming long-wave bands in the absorption spectra of the materials studied.

© 2014 Optical Society of America

OCIS Codes
(160.1890) Materials : Detector materials
(300.1030) Spectroscopy : Absorption
(300.6170) Spectroscopy : Spectra

History
Original Manuscript: November 15, 2013
Manuscript Accepted: November 29, 2013
Published: February 3, 2014

Citation
Viktor P. Makhniy, Paul P. Horley, Oksana V. Kinzerskaya, and Elena V. Stets, "Optical absorption spectra as a useful tool to find parameters of deep impurity centers in semiconductors," Appl. Opt. 53, B8-B11 (2014)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-53-10-B8

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