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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 53, Iss. 29 — Oct. 10, 2014
  • pp: H44–H50

Measurement of LED chips using a large-area silicon photodiode

Pei-Ting Chou, Shang-Ping Ying, Tzung-Te Chen, Han-Kuei Fu, Chien-Ping Wang, and Chih-Kung Lee  »View Author Affiliations

Applied Optics, Vol. 53, Issue 29, pp. H44-H50 (2014)

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We propose the output power measurement of bare-wafer/chip light-emitting diodes (LEDs) using a large-area silicon (Si) photodiode with a simple structure and high accuracy relative to the conventional partial flux measurement using an integrating sphere. To obtain the optical characteristics of the LED chips measured using the two methods, three-dimensional ray-trace simulations are used to perform the measurement deviations owing to the chip position offset or tilt angle. The ray-tracing simulation results demonstrate that the deviation of light remaining in the integrating sphere is approximately 65% for the vertical LED chip and 53% for the flip-chip LED chip if the measurement distance in partial flux method is set to be 5–40 mm. By contrast, the deviation of light hitting the photodiode is only 15% for the vertical LED chip and 23% for the flip-chip LED chip if the large-area Si photodiode is used to measure the output power with the same measurement distance. As a result, the large-area Si photodiode method practically reduces the output power measurement deviations of the bare-wafer/chip LED, so that a high-accuracy measurement can be achieved in the mass production of the bare-wafer/chip LED without the complicated integrating sphere structure.

© 2014 Optical Society of America

OCIS Codes
(120.4640) Instrumentation, measurement, and metrology : Optical instruments
(120.4800) Instrumentation, measurement, and metrology : Optical standards and testing
(230.3670) Optical devices : Light-emitting diodes
(230.5170) Optical devices : Photodiodes

Original Manuscript: April 30, 2014
Manuscript Accepted: June 9, 2014
Published: August 4, 2014

Pei-Ting Chou, Shang-Ping Ying, Tzung-Te Chen, Han-Kuei Fu, Chien-Ping Wang, and Chih-Kung Lee, "Measurement of LED chips using a large-area silicon photodiode," Appl. Opt. 53, H44-H50 (2014)

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  1. International Commission on Illumination, “Measurement of LEDs,” publication no.  (CIE, 1999).
  2. L. Hanssen, “Integrating-sphere system and method for absolute measurement of transmittance, reflectance, and absorptance of specular samples,” Appl. Opt. 40, 3196–3204 (2001). [CrossRef]
  3. A. M. Nilsson, A. Jonsson, J. C. Jonsson, and A. Roos, “Method for more accurate transmittance measurements of low-angle scattering samples using an integrating sphere with an entry port beam diffuser,” Appl. Opt. 50, 999–1006 (2011). [CrossRef]
  4. H. Wang, Z. Da, L. Liu, and J. Zhao, “Optical transmittance measurement system for coated elements with low transmittance,” Appl. Opt. 51, 2395–2399 (2012). [CrossRef]
  5. Z. Liu, S. Liu, K. Wang, and X. Luo, “Measurement and numerical studies of optical properties of YAG:Ce phosphor for white light-emitting diode packaging,” Appl. Opt. 49, 247–257 (2010). [CrossRef]
  6. A. Carrasco-Sanz, S. Martin-Lopez, P. Corredera, M. González-Herraez, and M. L. Hernanz, “High-power and high-accuracy integrating sphere radiometer: design, characterization, and calibration,” Appl. Opt. 45, 511–518 (2006). [CrossRef]
  7. A. V. Prokhorov, S. N. Mekhontsev, and L. M. Hanssen, “Monte Carlo modeling of an integrating sphere reflectometer,” Appl. Opt. 42, 3832–3842 (2003). [CrossRef]
  8. S. Park, D.-H. Lee, and S.-N. Park, “Six-port integrating sphere photometer with uniform spatial response,” Appl. Opt. 50, 2220–2227 (2011). [CrossRef]
  9. S. Park, D.-H. Lee, S.-N. Park, and C.-W. Park, “Experimental validation of the six-port design for a highly uniform integrating sphere photometer,” Appl. Opt. 52, 7178–7185 (2013). [CrossRef]
  10. Illuminating Engineering Society, Approved Method: Electrical and Photometric Measurements of Solid-State Lighting (Illuminating Engineering Society, 2008), LM-79-08.
  11. L. C. Alves, F. Reis, M. C. Torres, G. B. Almeida, and I. B. Couceiro, “Spatial uniformity of the silicon photodiodes for establishment of spectral responsivity scale,” in Proceedings of the XIX IMEKO World Congress (IMEKO) (2009), pp. 164–167.
  12. G. Eppeldauer, “Chopped radiation measurements with large area Si photodiodes,” J. Res. Natl. Inst. Stand. Technol. 103, 153–162 (1998). [CrossRef]
  13. S. J. Lee, “Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes,” Opt. Eng. 45, 014601 (2006). [CrossRef]
  14. T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15, 6670–6676 (2007). [CrossRef]
  15. F. Hu, K.-Y. Qian, and Y. Luo, “Far-field pattern simulation of flip-chip bonded power light-emitting diodes by a Monte Carlo photon-tracing method,” Appl. Opt. 44, 2768–2771 (2005). [CrossRef]

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