Films of SiO₂, SiO_xN_y, and TiO₂, were prepared by reactive evaporation in ionized gases. Refractive index, absorptance, ir transmittance, stability, structure, and stress of these films were investigated. The SiO₂ films had the same refractive index as bulk quartz glass and an absorption coefficient of less than 40 cm^-1 at 190 nm. The internal stress in the SiO₂ films was considerably lower than that for silicon oxide films prepared by conventional reactive evaporation. SiO_xN_y, films formed extremely smooth surfaces when heated in air after evaporation. On unheated substrates TiO₂ films with refractive indices up to 2.3 and an absorption coefficient of less than 40 cm^-1 at 633 nm were obtained. All films were x-ray amorphous and proved to be mechanically stable and water resistant.

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