Films of SiO2, SiOxNy, and TiO2, were prepared by reactive evaporation in ionized gases. Refractive index, absorptance, ir transmittance, stability, structure, and stress of these films were investigated. The SiO2 films had the same refractive index as bulk quartz glass and an absorption coefficient of less than 40 cm-1 at 190 nm. The internal stress in the SiO2 films was considerably lower than that for silicon oxide films prepared by conventional reactive evaporation. SiOxNy, films formed extremely smooth surfaces when heated in air after evaporation. On unheated substrates TiO2 films with refractive indices up to 2.3 and an absorption coefficient of less than 40 cm-1 at 633 nm were obtained. All films were x-ray amorphous and proved to be mechanically stable and water resistant.
W. Heitmann, "Properties of Evaporated SiO2, SiOxNy, and TiO2, Films," Appl. Opt. 10, 2685-2689 (1971)