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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 12, Iss. 3 — Mar. 1, 1973
  • pp: 569–572

Absorption Coefficient as a Function of Resistance for Optical Germanium at 10.6 μm

Evan D. Capron and Orville L. Brill  »View Author Affiliations


Applied Optics, Vol. 12, Issue 3, pp. 569-572 (1973)
http://dx.doi.org/10.1364/AO.12.000569


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Abstract

Room-temperature transmittance measurements at 10.6 μm were made of germanium single-crystal samples. The samples were cut from very large doped single-crystal slabs that had been grown from +40-Ω-cm charge material of unknown purity for use as infrared windows and image-forming elements. The dependence of the absorption coefficient on sample resistivity was calculated from measured transmittances of ninety-two samples with resistivities ranging from 0.9 Ω-cm to 57 Ω-cm. Maximum transmittance at 10.6 μm was obtained for the samples that were doped to a resistivity of 5–10 Ω-cm and n-type conductivity.

© 1973 Optical Society of America

History
Original Manuscript: August 31, 1972
Published: March 1, 1973

Citation
Evan D. Capron and Orville L. Brill, "Absorption Coefficient as a Function of Resistance for Optical Germanium at 10.6 μm," Appl. Opt. 12, 569-572 (1973)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-12-3-569


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References

  1. P. A. Young, Appl. Opt. 10, 638 (1971). [CrossRef] [PubMed]
  2. F. Horrigan, C. Klein, R. Rudko, D. Wilson, Microwave Mag.68 (1969).
  3. T. S. Moss, Optical Properties of Semiconductors (Butterworths, London, 1959), p. 6.
  4. P. W. Kruse, L. D. McGlauchlin, R. B. McQuistan, Elements of Infrared Technology (Wiley, New York, 1962), p. 139.
  5. C. D. Salzberg, J. J. Villa, J. Opt. Soc. Am. 47, 244 (1957). [CrossRef]

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