The Ninth Annual Symposium on Optical Materials for High Power Lasers (Boulder Damage Symposium) was held at the National Bureau of Standards in Boulder, Colorado, 4–6 October 1977. The symposium was under the auspices of ASTM Committee F-1, Subcommittee on Laser Standards, with the joint sponsorship of NBS, the Defense Advanced Research Project Agency, the Department of Energy (formerly ERDA), and the Office of Naval Research. About 185 scientists attended, including representatives of the United Kingdom, France, Canada, Australia, Union of South Africa, and the Soviet Union. The Symposium was divided into sessions concerning Laser Windows and Materials, Mirrors and Surfaces, Thin Films, Laser Glass and Glass Lasers, and Fundamental Mechanisms. As in previous years, the emphasis of the papers was directed toward new frontiers and new developments. Particular emphasis was given to materials for use from 10.6 μm to the uv region. Highlights included surface characterization, thin film-substrate boundaries, and advances in fundamental laser–matter threshold interactions and mechanisms. The scaling of damage thresholds with pulse duration, focal area, and wavelength were also discussed. Alexander J. Glass of Lawrence Livermore Laboratory and Arthur H. Guenther of the Air Force Weapons Laboratory were co-chairpersons. The Tenth Annual Symposium is scheduled for 12–14 September 1978 at the National Bureau of Standards, Boulder, Colorado.
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Critical Angles for Stress-Insensitive Birefringence Axes (after Joiner et al.)
NaCl
KCl
KCℓ
CaF2
BaF2
SrF2
CdTe
GaAs
λ
633 nm
633 nm
10.6 μm
633 nm
633 nm
633 nm
10.6 μm
10.6 μm
A
+0.68
−2.16
−2.12
−0.44
−0.19
−0.25
+0.84
+1.10
θC
—
34.2°
34.5°
56.3°
66.4°
63.4°
—
—
Columns 2 and 3 should both read KCl.
Table II
Summary of Surface Statistics (after House et al.)a
SAMPLE TREATMENT
σb (Å)
σt (Å)
σt (Å)
s (Å/μm)
ℓ (μm)
hp (Å)
f
E (MV/cm)
σi (Å)
Flame
5.62
75.4
20.9
208.4 (1.19°)
231.8
0.0718
2.24
13.32
Conventional
2.27
16.27
12.4
63.93 (0.37°)
0.90
75.6
0.0422
1.60
13.75
Bowl Feed
30.2
30.2
24.8
118 (0.68°)
0.89
0.86
13
Overcoated
2.68
2.68
9.3
28.85 (0.17°)
0.82
0.89
13.75
Ion–Etched
60.8
60.8
16.5
260 (1.49°)
0.48
1.34
36
Acid–Etched
15
111
216
1870 (10.59°)
1.5
0.41
243
σb is the background roughness (i.e., excluding adsorbed particles); the first σt is the over-all roughness including particles from profilometry; the second σt is the over-all roughness determined at 5682 Å by total integrated scattering; s is the rms slope and equivalent angle; l is the correlation length; hp is the rms height including particles and/or holes; f is the fraction of the surface covered by these gross features; E is the measured damage threshold; and σi is the initial rms roughness previously determined.
Table III
Expansion coefficient and Young’s modulus values for ThF4, ZnSe, and thallium iodide materials (after Ledger and Bastien)
Substrates Utilized
Film Material
Film Expansion Coefficient (αf)
Young’s Modulus (Ef)
KCℓ, Cervit
ThF4
13.3 × 10−6/°C
4.3 × 105 kg/cm2
KCℓ, Cervit
ThF4
11.1 × 10−6/°C
3.9 × 105 kg/cm2
KCℓ, ZnSe
ThF4
18.1 × 10−6/°C
6.8 × 105 kg/cm2
KCℓ, ZnSe
ThF4
15.1 × 10−6/°C
4.3 × 105 kg/cm2
KCℓ, ZnSe
TℓI
36.0 × 10−6/°C
2.3 × 105 kg/cm2
KCℓ, Cervit
ZnSe
8.1 × 10−6/°C
4.2 × 105 kg/cm2
Table IV
Film stress data for ThF4, ZnSe, and TlI thin films (after Ledger and Bastien)
Material
Rate Å/Sec
Temp °C
Stress Coefficients
A (kg/cm2)
B (microns)−1
C (microns)−1
ZnSe
2.6
100
−2900
2.0
25.0
ZnSe
18.0
100
−2100
0.95
56.0
ZnSe
4.4
150
−3300
0.2
80.0
ZnSe
9.0
150
−2610
0.4
75.0
ZnSe
20.0
150
−2200
0.9
68.2
ZnSe
24.4
150
−2384
0.9
74.3
ZnSe
3.0
200
−4640
~0.0
9.0
ZnSe
19.0
200
−3800
~0.0
21.5
ZnSe
24.0
200
−3020
0.4
82.5
ThF4
30A/Sec
150°C
+1057
~0.0
12.5
TℓI
-
100°C
~150
-
-
Table V
Experimental results for two-photon absorption coefficient α(2) at 355 nm. The orientations of sample and electric field are tabulated along with the sample thickness ℓ (after Liu et al.)
Material
, eV (approx.)
Surface Normal
ℓ, cm
α(2), cm/MW
KI
5.0
a ≡ [100]
b ≡ [001]
0.47
(7.3 ± 1.5) × 10−3
RbBr
5.4
a
b
1.0
(2.4 ± 0.5) × 10−3
RbI
5.0
a
b
1.0
(5.1 ± 0.8) × 10−3
ADA
c ≡ 45° z-cut
d ≡ ∥ z axis
1.6
(3.5 ± 1.1) × 10−5
ADP
6.8
c
d
2.0
(6.8 ± 2.4) × 10−6
CDA
c
d
1.4
(8.0 ± 2.4) × 10−5
CD*A
c
d
1.15
(2.8 ± 1.0) × 10−5
KDA
c
d
1.0
(4.8 ± 1.4) × 10−5
KD*A
c
d
1.0
(2.7 ± 0.9) × 10−5
KDP
6.9
c
d
1.0
(5.9 ± 2.1) × 10−6
KD*P
c
d
1.0
(5.4 ± 1.9) × 10−6
RDA
c
d
1.25
(5.0 ± 1.5) × 10−5
RDP
c
d
1.0
< 5.9 × 10−6
Al2O3
7.3
c-axis
--
0.5
< 1.6 × 10−6
SiO2 (fused)
7.8
--
--
0.64
< 1.3 × 10−6
Table VI
Experimental results for two-photon absorption coefficient α(2) at 266 nm. The orientations of sample and electric field are tabulated along with the sample thickness ℓ (after Liu et al.)
Material
, eV (approx.)
Surface Normal
ℓ, cm
α(2), cm/MW
NaCl
7–8
a ≡ [100]
b ≡ [001]
0.74
(3.5 ± 0.9) × 10−3
NaBr
7.7
a
b
0.74
(2.5 ± 0.4) × 10−3
KCl
6.5
a
b
0.74
(1.7 ± 0.3) × 10−3
KBr
6.0
a
b
0.74
(2.0 ± 0.6) × 10−3
KI
5.1
a
b
0.47
(3.8 ± 1.1) × 10−3
RbCl
7.3
a
b
0.60
(1.0 ± 0.2) × 10−3
RbBr
5.4
a
b
1.0
(2.2 ± 0.4) × 10−3
RbI
5.0
a
b
1.0
(2.5 ± 0.8) × 10−3
CaCO3
5.9
--
--
0.43
(2.4 ± 0.7) × 10−4
Al2O3
7.3
c-axis
--
0.50
(2.7 ± 0.8) × 10−4
SiO2 (fused)
7.8
--
--
0.57
≲ 4.5 × 10−5
SiO2 (crystal)
7.8
c-axis
--
0.50
≲ 4.5 × 10−5
CaF2
10.0
a
b
0.47
< 2.0 × 10−5
LiF
11.6
a
b
0.47
< 2.0 × 10−5
KDP
6.9
1.06 μm → 0.53 μm cut
--
0.57
(2.7 ± 0.8) × 10−4
ADP
6.8
c-axis
--
0.50
(2.4 ± 0.7) × 10−4
Tables (6)
Table I
Critical Angles for Stress-Insensitive Birefringence Axes (after Joiner et al.)
NaCl
KCl
KCℓ
CaF2
BaF2
SrF2
CdTe
GaAs
λ
633 nm
633 nm
10.6 μm
633 nm
633 nm
633 nm
10.6 μm
10.6 μm
A
+0.68
−2.16
−2.12
−0.44
−0.19
−0.25
+0.84
+1.10
θC
—
34.2°
34.5°
56.3°
66.4°
63.4°
—
—
Columns 2 and 3 should both read KCl.
Table II
Summary of Surface Statistics (after House et al.)a
SAMPLE TREATMENT
σb (Å)
σt (Å)
σt (Å)
s (Å/μm)
ℓ (μm)
hp (Å)
f
E (MV/cm)
σi (Å)
Flame
5.62
75.4
20.9
208.4 (1.19°)
231.8
0.0718
2.24
13.32
Conventional
2.27
16.27
12.4
63.93 (0.37°)
0.90
75.6
0.0422
1.60
13.75
Bowl Feed
30.2
30.2
24.8
118 (0.68°)
0.89
0.86
13
Overcoated
2.68
2.68
9.3
28.85 (0.17°)
0.82
0.89
13.75
Ion–Etched
60.8
60.8
16.5
260 (1.49°)
0.48
1.34
36
Acid–Etched
15
111
216
1870 (10.59°)
1.5
0.41
243
σb is the background roughness (i.e., excluding adsorbed particles); the first σt is the over-all roughness including particles from profilometry; the second σt is the over-all roughness determined at 5682 Å by total integrated scattering; s is the rms slope and equivalent angle; l is the correlation length; hp is the rms height including particles and/or holes; f is the fraction of the surface covered by these gross features; E is the measured damage threshold; and σi is the initial rms roughness previously determined.
Table III
Expansion coefficient and Young’s modulus values for ThF4, ZnSe, and thallium iodide materials (after Ledger and Bastien)
Substrates Utilized
Film Material
Film Expansion Coefficient (αf)
Young’s Modulus (Ef)
KCℓ, Cervit
ThF4
13.3 × 10−6/°C
4.3 × 105 kg/cm2
KCℓ, Cervit
ThF4
11.1 × 10−6/°C
3.9 × 105 kg/cm2
KCℓ, ZnSe
ThF4
18.1 × 10−6/°C
6.8 × 105 kg/cm2
KCℓ, ZnSe
ThF4
15.1 × 10−6/°C
4.3 × 105 kg/cm2
KCℓ, ZnSe
TℓI
36.0 × 10−6/°C
2.3 × 105 kg/cm2
KCℓ, Cervit
ZnSe
8.1 × 10−6/°C
4.2 × 105 kg/cm2
Table IV
Film stress data for ThF4, ZnSe, and TlI thin films (after Ledger and Bastien)
Material
Rate Å/Sec
Temp °C
Stress Coefficients
A (kg/cm2)
B (microns)−1
C (microns)−1
ZnSe
2.6
100
−2900
2.0
25.0
ZnSe
18.0
100
−2100
0.95
56.0
ZnSe
4.4
150
−3300
0.2
80.0
ZnSe
9.0
150
−2610
0.4
75.0
ZnSe
20.0
150
−2200
0.9
68.2
ZnSe
24.4
150
−2384
0.9
74.3
ZnSe
3.0
200
−4640
~0.0
9.0
ZnSe
19.0
200
−3800
~0.0
21.5
ZnSe
24.0
200
−3020
0.4
82.5
ThF4
30A/Sec
150°C
+1057
~0.0
12.5
TℓI
-
100°C
~150
-
-
Table V
Experimental results for two-photon absorption coefficient α(2) at 355 nm. The orientations of sample and electric field are tabulated along with the sample thickness ℓ (after Liu et al.)
Material
, eV (approx.)
Surface Normal
ℓ, cm
α(2), cm/MW
KI
5.0
a ≡ [100]
b ≡ [001]
0.47
(7.3 ± 1.5) × 10−3
RbBr
5.4
a
b
1.0
(2.4 ± 0.5) × 10−3
RbI
5.0
a
b
1.0
(5.1 ± 0.8) × 10−3
ADA
c ≡ 45° z-cut
d ≡ ∥ z axis
1.6
(3.5 ± 1.1) × 10−5
ADP
6.8
c
d
2.0
(6.8 ± 2.4) × 10−6
CDA
c
d
1.4
(8.0 ± 2.4) × 10−5
CD*A
c
d
1.15
(2.8 ± 1.0) × 10−5
KDA
c
d
1.0
(4.8 ± 1.4) × 10−5
KD*A
c
d
1.0
(2.7 ± 0.9) × 10−5
KDP
6.9
c
d
1.0
(5.9 ± 2.1) × 10−6
KD*P
c
d
1.0
(5.4 ± 1.9) × 10−6
RDA
c
d
1.25
(5.0 ± 1.5) × 10−5
RDP
c
d
1.0
< 5.9 × 10−6
Al2O3
7.3
c-axis
--
0.5
< 1.6 × 10−6
SiO2 (fused)
7.8
--
--
0.64
< 1.3 × 10−6
Table VI
Experimental results for two-photon absorption coefficient α(2) at 266 nm. The orientations of sample and electric field are tabulated along with the sample thickness ℓ (after Liu et al.)
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