Abstract
A method for the measurement of the thermal emissivity of films on substrates and for the subsequent determination of the optical constants is described. It is applied to sputtered amorphous silicon films on sapphire substrates. The results, obtained in the 3–6.3-μm spectral range and at 400–800°C, confirm the existence of residual ir absorption in this region with an absorption coefficient on the order of 102.
© 1978 Optical Society of America
Full Article |
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Figures (6)
You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Equations (18)
You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription