OSA's Digital Library

Applied Optics

Applied Optics


  • Vol. 17, Iss. 16 — Aug. 15, 1978
  • pp: 2556–2561

Effects of ion etching on the properties of GaAs

M. Kawabe, N. Kanzaki, K. Masuda, and S. Namba  »View Author Affiliations

Applied Optics, Vol. 17, Issue 16, pp. 2556-2561 (1978)

View Full Text Article

Enhanced HTML    Acrobat PDF (683 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



Effects of ion etching on the optical properties and lattice disorder of GaAs were studied by means of photoluminescence, He backscattering, and enhanced chemical etching. The photoluminescence intensity excited by a He–Cd laser (3250 Å), which penetrates a distance of approximately 150 Å into GaAs, is decreased to less than 20% of the initial value after ion etching by 100-eV Ar and recovered almost completely by 450° C annealing. Helium backscattering and electron diffraction pattern indicate the existence of an amorphous layer, the thickness of which is 20% larger than the value estimated by LSS theory. Photoluminescence measurement shows that beyond this amorphous region there are distributed a lot of nonradiative recombination centers as well as radiative recombination centers which diffuse into the bulk. The depth of this distribution is larger than that of the amorphous region by 1 order of magnitude.

© 1978 Optical Society of America

Original Manuscript: September 21, 1977
Published: August 15, 1978

M. Kawabe, N. Kanzaki, K. Masuda, and S. Namba, "Effects of ion etching on the properties of GaAs," Appl. Opt. 17, 2556-2561 (1978)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. I. Hayashi, M. B. Panish, E. W. Foy, F. Sumski, Appl. Phys. Lett. 17, 109 (1970). [CrossRef]
  2. R. A. Logan, F. K. Reinhart, J. Appl. Phys. 44, 4172 (1973). [CrossRef]
  3. L. Comerford, P. Zory, Appl. Phys. Lett. 25, 208 (1974). [CrossRef]
  4. F. A. Blum, K. L. Lawley, W. C. Holton, J. Appl. Phys. 46, 2605 (1975). [CrossRef]
  5. J. L. Merz, R. A. Logan, W. Wiegmann, A. C. Gossard, Appl. Phys. Lett. 26, 337 (1975). [CrossRef]
  6. A. Y. Cho, W. C. Ballamy, J. Appl. Phys. 46, 783 (1975). [CrossRef]
  7. R. L. Jacobson, G. K. Wehner, J. Appl. Phys. 36, 2674 (1965). [CrossRef]
  8. R. J. MacDonald, D. Haneman, J. Appl. Phys. 37, 1609 (1966). [CrossRef]
  9. G. W. Sachse, W. E. Miller, C. Gross, Solid State Electron. 18, 431 (1975). [CrossRef]
  10. C. J. Summers, J. C. Miklosz, J. Appl. Phys. 44, 4653 (1973). [CrossRef]
  11. K. Aoki, K. Gamo, K. Masuda, S. Namba, Jpn. J. Appl. Phys. 15, 405 (1976). [CrossRef]
  12. J. M. Woodcock, J. M. Shannon, D. J. Clark, Solid State Electron. 18, 267 (1975). [CrossRef]
  13. P. K. Chatterjee, W. V. McLevige, K. V. Vaidyanathan, B. G. Streetman, Appl. Phys. Lett. 28, 509 (1976). [CrossRef]
  14. M. Nakamura, A. Yariv, H. W. Yen, S. Somekh, H. L. Garvin, Appl. Phys. Lett. 22, 515 (1973). [CrossRef]
  15. H. L. Garvin, E. Garmire, S. Somekh, H. Stoll, A. Yariv, Appl. Opt. 12, 455 (1973). [CrossRef] [PubMed]
  16. S. Somekh, H. C. Casey, Appl. Opt. 16, 126 (1977). [CrossRef] [PubMed]
  17. T. Tsurushima, H. Tanoue, H. Funakashi, Y. Ueno, in Technical Digest of Eighth Symposium on Ion Implantation and Submicron Fabrication (Institute of Physical and Chemical Research, Japan, 1977), p. 89 (in Japanese).
  18. H. C. Casey, D. D. Sell, K. W. Wecht, J. Appl. Phys. 46, 250 (1975). [CrossRef]
  19. H. Muller, F. H. Eisen, J. W. Mayer, J. Electrochem. Soc. 122, 651 (1975). [CrossRef]
  20. J. F. Ziegler, J. E. E. Baglin, J. Appl. Phys. 42, 2031 (1971). [CrossRef]
  21. J. Lindhard, M. Scharff, H. E. Schiott, K. Dan. Vidensk. Selsk. Mat. Fys. Medd. 33, No. 14 (1963).
  22. The calculation is based on the table by K. B. Winterbon, Ion Implantation Range and Energy Deposition Distributions (Plenum, New York, 1975), Vol. 2.
  23. R. Bauerlein, Z. Phys. 176, 498 (1963). [CrossRef]
  24. S. Namba, M. Kawabe, N. Kanzaki, K. Masuda, J. Vac. Sci. Technol. 12, 1348 (1975). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited