High performance avalanche transistor switchout for external pulse selection at 1.06 µm
Applied Optics, Vol. 17, Issue 19, pp. 3184-3186 (1978)
http://dx.doi.org/10.1364/AO.17.003184
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Abstract
The design and performance of an avalanche transistor switchout are described. The device selects a single pulse from a train of cw or Q-switched mode-locked pulses and introduces less than ±1% amplitude variation in the selected pulse. The prepulse rejection ratio exceeds 107, and a lifetime of greater than 107 shots has been achieved.
© 1978 Optical Society of America
Citation
S. J. Davis, J. E. Murray, D. C. Downs, and W. H. Lowdermilk, "High performance avalanche transistor switchout for external pulse selection at 1.06 µm," Appl. Opt. 17, 3184-3186 (1978)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-17-19-3184
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