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Applied Optics

Applied Optics


  • Vol. 17, Iss. 19 — Oct. 1, 1978
  • pp: 3184–3186

High performance avalanche transistor switchout for external pulse selection at 1.06 μm

S. J. Davis, J. E. Murray, D. C. Downs, and W. H. Lowdermilk  »View Author Affiliations

Applied Optics, Vol. 17, Issue 19, pp. 3184-3186 (1978)

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The design and performance of an avalanche transistor switchout are described. The device selects a single pulse from a train of cw or Q-switched mode-locked pulses and introduces less than ±1% amplitude variation in the selected pulse. The prepulse rejection ratio exceeds 107, and a lifetime of greater than 107 shots has been achieved.

© 1978 Optical Society of America

Original Manuscript: September 30, 1977
Published: October 1, 1978

S. J. Davis, J. E. Murray, D. C. Downs, and W. H. Lowdermilk, "High performance avalanche transistor switchout for external pulse selection at 1.06 μm," Appl. Opt. 17, 3184-3186 (1978)

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  1. D. J. Kuizenga, Opt. Commun. 22, 156 (1977). [CrossRef]
  2. A. J. DeMaria, H. A. Heynau, A. W. Penny, G. Wisner, J. Appl. Phys. 38, 2693 (1967). [CrossRef]
  3. G. Kachen, L. Steinmetz, J. Kysilka, Appl. Phys. Lett. 13, 229 (1968). [CrossRef]
  4. M. Michon, H. Guillet, D. LeGoff, S. Raynaud, Rev. Sci. Instrum. 40, 263 (1969). [CrossRef]
  5. A. J. Alcock, M. C. Richardson, Opt. Commun. 2, 65 (1970). [CrossRef]
  6. J. M. Ley, T. H. Christmas, C. G. Widley, Proc. IEEE 117, 1057 (1970).
  7. R. C. Hyer, H. D. Sutphin, K. R. Winn, Rev. Sci. Instrum. 46, 1333 (1975). [CrossRef]
  8. Quantel International, Inc., 928 Benecia Avenue, Sunnyvale, Calif. 94086, and Xonies, Inc., 6849 Hayvenhurst Avenue, Van Nuys, Calif. 91406, manufacture commercial pulse selectors based on krytron drivers.
  9. An entirely different technique for generating the fast electrical pulse has been introduced by D. H. Auston, Appl. Phys. Lett. 26, 101 (1975). His technique uses photoconductivity in silicon to turn on and turn off a high voltage with pulses at 0.53 μm and 1.064 μm. However, this technique is not useful for the type of switchout considered here because it requires an isolated mode-locked pulse to begin with that is synchronized to the output pulse train of the oscillator. [CrossRef]
  10. V. J. Corcoran, R. W. McMillan, P. M. Rushworth, Appl. Opt. 14, 643 (1975). [CrossRef] [PubMed]
  11. G. Brasseur, J. L. Van Eck, P. Vilain, Appl. Opt. 14, 1758 (1975). [CrossRef]
  12. Lasermetrics, 111 Galway Place, Teaneck, N.J. 07666.

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