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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 17, Iss. 21 — Nov. 1, 1978
  • pp: 3477–3481

Surface damage and the optical reflectance of single-crystal silicon

P. J. Zanzucchi and M. T. Duffy  »View Author Affiliations


Applied Optics, Vol. 17, Issue 21, pp. 3477-3481 (1978)
http://dx.doi.org/10.1364/AO.17.003477


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Abstract

The reflectance of silicon measured at 4.3 eV can be used to determine the surface quality of silicon. Crystallographic damage, which occurs with abrasive polishing, and texture, which occurs with epitaxial film growth, can be detected. The effect of surface damage on the optical reflectance of silicon measured at 4.3 eV is reported. The reflectance measurement is nondestructive, simple, fast (on the order of seconds), and sensitive. The technique is readily adaptable to quality control inspection in silicon device manufacturing facilities.

© 1978 Optical Society of America

History
Original Manuscript: April 8, 1978
Published: November 1, 1978

Citation
P. J. Zanzucchi and M. T. Duffy, "Surface damage and the optical reflectance of single-crystal silicon," Appl. Opt. 17, 3477-3481 (1978)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-17-21-3477


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References

  1. T. M. Buck, R. L. Meek, in Silicon Device Processing, C. P. Marsden, Ed., NBS Special Publication 337 (NBS, Washington DC, 1970), p. 419.
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  15. P. J. Zanzucchi, M. T. Duffy, R. C. Alig, J. Electrochem Soc. 125, 299 (1978). [CrossRef]

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