The problem of edge coupling a double-heterostructure GaAlAs laser diode to a planar titanium indiffused LiNbO3 waveguide has been studied both experimentally and theoretically. Alignment sensitivities (3-dB points) have been measured and found to be ∼15 and 1 μm in the longitudinal and transverse directions, respectively. The dependence of the coupling efficiency on misalignments has been found to be in good agreement with the predictions of a simple Gaussian coupling model. In addition, a prototype coupler has been fabricated in a flip-chip configuration on a silicon substrate with ∼15% coupling efficiency into the waveguide's fundamental mode.
© 1980 Optical Society of America
Original Manuscript: December 19, 1979
Published: June 1, 1980
D. G. Hall, J. D. Spear-Zino, H. G. Koenig, R. R. Rice, J. K. Powers, G. H. Burkhart, and P. D. Bear, "Edge coupling of a GaAlAs DH laser diode to a planar Ti:LiNbO3 waveguide," Appl. Opt. 19, 1847-1852 (1980)