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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 19, Iss. 14 — Jul. 15, 1980
  • pp: 2370–2374

Optimum epilayer structures for integrated optics lasers

M. B. Chang and E. Garmire  »View Author Affiliations


Applied Optics, Vol. 19, Issue 14, pp. 2370-2374 (1980)
http://dx.doi.org/10.1364/AO.19.002370


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Abstract

This paper is a theoretical evaluation of double heterostructure AlGaAs laser epilayer structures designed to optimize performance in integrated optical circuits. The thickness and AlAs concentration are varied to maximize coupling efficiency between the active laser region and the passive waveguide region of the integrated optical circuit. This maximization is performed consistent with maintaining a low laser threshold and ease of fabrication. Both an asymmetric large optical cavity and a symmetric large optical cavity with an internal epitaxially grown tapered active layer are considered. It is shown that with suitable design, both efficient coupling and low threshold can be achieved.

© 1980 Optical Society of America

History
Original Manuscript: February 15, 1980
Published: July 15, 1980

Citation
M. B. Chang and E. Garmire, "Optimum epilayer structures for integrated optics lasers," Appl. Opt. 19, 2370-2374 (1980)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-19-14-2370


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References

  1. F. K. Reinhart, R. A. Logan, C. V. Shank, Appl. Phys. Lett. 27, 45 (July1975). [CrossRef]
  2. S. Wang, IEEE J. Quantum Electron. QE-13, 176 (1977). [CrossRef]
  3. H. Kressel, H. F. Lockwood, F. Z. Hawrylo, Appl. Phys. Lett. 18, 43 (1971). [CrossRef]
  4. G. H. B. Thompson, G. D. Henshall, J. E. A. Whiteaway, P. A. Kirkby, J. Appl. Phys. 47, 1501 (1976). [CrossRef]

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