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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 19, Iss. 22 — Nov. 15, 1980
  • pp: 3795–3799

Spectral response self-calibration and interpolation of silicon photodiodes

J. Geist, E. F. Zalewski, and A. R. Schaefer  »View Author Affiliations


Applied Optics, Vol. 19, Issue 22, pp. 3795-3799 (1980)
http://dx.doi.org/10.1364/AO.19.003795


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Abstract

The possibility of interpolating the internal quantum efficiency of silicon photodiodes using a model with three adjustable parameters is investigated. The three parameters are determined from self-calibration measurements at 351, 476, and 800 nm. The internal quantum efficiency is then interpolated to 407 and 677 nm using the model. The calculated results are compared with direct measurements referenced to an electrical substitution radiometer. A difference of 0.6% was observed at 407 nm. This is probably significant, arising from inadequacies in the internal quantum efficiency model and possibly from volume recombination that is not accounted for by the self-calibration procedure. An insignificant (<0.1%) difference was observed at 677 nm.

© 1980 Optical Society of America

History
Original Manuscript: June 30, 1980
Published: November 15, 1980

Citation
J. Geist, E. F. Zalewski, and A. R. Schaefer, "Spectral response self-calibration and interpolation of silicon photodiodes," Appl. Opt. 19, 3795-3799 (1980)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-19-22-3795


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References

  1. J. Geist, Appl. Opt. 18, 760 (1979). [CrossRef] [PubMed]
  2. E. F. Zalewski, J. Geist, Appl. Opt. 19, 1214 (1980). [CrossRef] [PubMed]
  3. An exceedingly accurate cryogenic cavity, electrical substitution radiometer has been developed for temperature scale studies at England’s National Physical Laboratory. Appropriately modified for detector spectral response calibration, it may be able to produce substantially smaller uncertainties but only at the cost of considerable inconvenience.
  4. J. Geist, E. F. Zalewski, Appl. Phys. Lett. 35, 503 (1979). [CrossRef]
  5. J. Geist, J. Appl. Phys. 51, 3993 (1980). [CrossRef]
  6. This statement assumes that the nominal thickness of the oxide is known from the conditions under which it was grown.
  7. T. Huen, Appl. Opt. 18, 1927 (1979). [CrossRef] [PubMed]
  8. A. S. Grove, Physics and Technology of Semiconductor Devices, (Wiley, New York, 1967), pp. 153–161.
  9. A. S. Grove, Physics and Technology of Semiconductor Devices, (Wiley, New York, 1967), pp. 161–163.
  10. A. S. Grove, Physics and Technology of Semiconductor Devices, (Wiley, New York, 1967), pp. 334–345.
  11. J. Geist, Proc. Soc. Photo-Opt. Instrum. Eng. 196, 75 (1979).
  12. O. Christensen, J. Appl. Phys. 47, 689 (1976). [CrossRef]
  13. E. Antončík, N. K. S. Gaur, J. Phys. C: 11, 735 (1978). [CrossRef]

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