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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 19, Iss. 4 — Feb. 15, 1980
  • pp: 525–533

Linewidth measurement on IC masks and wafers by grating test patterns

H. P. Kleinknecht and H. Meier  »View Author Affiliations


Applied Optics, Vol. 19, Issue 4, pp. 525-533 (1980)
http://dx.doi.org/10.1364/AO.19.000525


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Abstract

Test patterns in the form of diffraction gratings are used for testing and monitoring linewidths on integrated circuit structures. The first and second diffraction orders produed by a laser beam are evaluated to give the width of the grating lines. Measurements on chrome masks show that this technique is accurate to 5% down to linewidths of 0.5 μm. The design of a test set for factory type mask testing is presented. Also, experiments are reported on the testing of patterns on Si wafers directly after. photoresist development and after various etching steps, and an automatic setup for rapid testing of wafers is described.

© 1980 Optical Society of America

History
Original Manuscript: August 21, 1979
Published: February 15, 1980

Citation
H. P. Kleinknecht and H. Meier, "Linewidth measurement on IC masks and wafers by grating test patterns," Appl. Opt. 19, 525-533 (1980)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-19-4-525

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