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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 19, Iss. 6 — Mar. 15, 1980
  • pp: 909–913

Silicon ribbon growth using scanned lasers

Aslan Baghdadi, R. James Ellis, and Richard W. Gurtler  »View Author Affiliations


Applied Optics, Vol. 19, Issue 6, pp. 909-913 (1980)
http://dx.doi.org/10.1364/AO.19.000909


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Abstract

The recent drive for low-cost photovoltaic arrays has renewed the interest in growing silicon in ribbon form. Our approach is to use a pair of scanned focused CO2 laser beams to establish a molten zone in a preformed fine-grained polycrystalline ribbon. Large-grained macrocrystalline silicon is then drawn from the molten zone at high rates. The coupling of the 10.6-μm laser beam to the melt zone is very low due to the high reflectivity of molten silicon. However, the coupling can be greatly increased by using a spherical-section reflector to reimage the reflected beam onto the molten zone. Silicon ribbon has been grown at rates up to 13.3 cm/min by this method. The best solar cell fabricated so far on this material had a conversion efficiency of 12.7%.

© 1980 Optical Society of America

History
Original Manuscript: June 8, 1979
Published: March 15, 1980

Citation
Aslan Baghdadi, R. James Ellis, and Richard W. Gurtler, "Silicon ribbon growth using scanned lasers," Appl. Opt. 19, 909-913 (1980)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-19-6-909


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References

  1. A. Rothwarf, N. C. Wyeth, J. Phillips, in Proceedings of the 13th IEEE Photovoltaic Specialists Meeting, Washington, D.C. (1978), p. 399.
  2. S. S. Chu, T. L. Chu, H. T. Yang, in Ref. 1, p. 956.
  3. M. S. Bale, in Ref. 1, p. 1202.
  4. B. Chalmers, H. E. LaBelle, A. I. Mlavsky, J. Cryst. Growth 13/14, 84 (1972). [CrossRef]
  5. D. L. Barret et al., J. Electrochem. Soc. 118(6), 953 (1971).
  6. A. Kachare, Jet Propulsion Laboratory; personal communication.
  7. R. W. Gurtler, A. Baghdadi, R. N. Legge, R. J. Ellis, 2nd European Communities Photovoltaic Solar Energy Conference. Proceedings of the International Conference, West Berlin, 23–26 April 1979, 7 pp., 145–152.

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