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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 19, Iss. 6 — Mar. 15, 1980
  • pp: 909–913

Silicon ribbon growth using scanned lasers

Aslan Baghdadi, R. James Ellis, and Richard W. Gurtler  »View Author Affiliations


Applied Optics, Vol. 19, Issue 6, pp. 909-913 (1980)
http://dx.doi.org/10.1364/AO.19.000909


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Abstract

The recent drive for low-cost photovoltaic arrays has renewed the interest in growing silicon in ribbon form. Our approach is to use a pair of scanned focused CO2 laser beams to establish a molten zone in a preformed fine-grained polycrystalline ribbon. Large-grained macrocrystalline silicon is then drawn from the molten zone at high rates. The coupling of the 10.6-μm laser beam to the melt zone is very low due to the high reflectivity of molten silicon. However, the coupling can be greatly increased by using a spherical-section reflector to reimage the reflected beam onto the molten zone. Silicon ribbon has been grown at rates up to 13.3 cm/min by this method. The best solar cell fabricated so far on this material had a conversion efficiency of 12.7%.

© 1980 Optical Society of America

History
Original Manuscript: June 8, 1979
Published: March 15, 1980

Citation
Aslan Baghdadi, R. James Ellis, and Richard W. Gurtler, "Silicon ribbon growth using scanned lasers," Appl. Opt. 19, 909-913 (1980)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-19-6-909

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