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Applied Optics

Applied Optics


  • Vol. 20, Iss. 18 — Sep. 15, 1981
  • pp: 3189–3196

Infrared charge-injection-device array performance at low background

C. R. McCreight and J. H. Goebel  »View Author Affiliations

Applied Optics, Vol. 20, Issue 18, pp. 3189-3196 (1981)

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Low-background tests of a 1 × 32 Si:Bi charge-injection-device (CID) IR detector array were carried out to evaluate its feasibility for space-based astronomical observations. Optimum performance was obtained at a temperature of 11 K. The device showed a peak responsivity of 4.4 A/W, an average noise level of ~670 electrons, and a minimum noise equivalent power of 3 × 10 - 17 W / Hz for 1-sec integration time. This sensitivity compares well with that of discrete extrinsic silicon photoconductors. The measured sensitivity, plus the apparent absence of anomalous effects, make extrinsic silicon CID arrays very promising for astronomical applications.

© 1981 Optical Society of America

Original Manuscript: April 6, 1981
Published: September 15, 1981

C. R. McCreight and J. H. Goebel, "Infrared charge-injection-device array performance at low background," Appl. Opt. 20, 3189-3196 (1981)

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