Multiple angle ellipsometric analysis of surface layers and surface layer contaminants

M. E. Pedinoff; O. M. Stafsudd

doi:10.1364/AO.21.000518

Applied Optics
Vol. 21,
Issue 3,
pp. 518-521
(1982)
•https://doi.org/10.1364/AO.21.000518

Multiple angle ellipsometric analysis of surface layers and surface layer contaminants

M. E. Pedinoff and O. M. Stafsudd

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M. E. Pedinoff and O. M. Stafsudd, "Multiple angle ellipsometric analysis of surface layers and surface layer contaminants," Appl. Opt. 21, 518-521 (1982)

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Abstract

A multiple angle ellipsometric method is used for the measurement of substrates covered by contaminant layers and for the measurement of thin film layers on substrates. The method evaluates the fundamental optical constants N and K of the substrate and film layers deposited on it. Results are given for oxided aluminum films on glass, contamination layers on gallium arsenide, silicon oxide layers on silicon, and silicon nitride layers on silicon. This method is applicable to optical and semiconductor substrate and film evaluation, provided the number of layers in the sample is known and the layers are partially transparent.

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Sample	Oxide thickness (Å)	Oxide index	Aluminum thickness (Å)	Aluminum N	Index K	Fitting error (deg)
1	31	2.03	96	1.17	06183	0.29
2	31	2.01	102	1.10	−6.78	0.30
3	18	2.60	278	1.25	−6.90	0.14
4	21	2.30	291	1.24	−6.90	1.02
5	18	2.60	297	1.25	−6.90	0.22
6	20	2.00	321	1.29	−7.00	0.14
7	22	2.24	364	1.23	−6.90	0.05
8	17	2.30	828	1.25	−6.90	0.16
9	20	2.58	865	1.24	−6.90	0.09

Sample thickness (Å)	Refractive index

	n	k
100	2.01	−3.90
100	1.98	−3.99
380	1.31	−6.13
300	1.30	−6.16
300	1.08	−6.40
320	1.10	−6.28
260	1.07	−6.14
830	1.03	−6.05
870	1.05	−6.30

Angle (deg)	Δ	ψ	n_r	n_i	T
70	162.56	10.50	2.66	0.00	29.45
67.5	167.76	14.31	2.11	0.00	24.55
65	170.45	17.54	2.52	0.00	28.75
62.5	172.33	20.54	2.38	0.00	26.70
60	173.64	23.19	2.33	0.00	26.45
57.5	174.54	25.58	2.11	0.00	26.05
55	175.40	27.72	2.01	0.00	25.15
52.5	175.99	29.58	2.57	0.00	30.00
50	176.52	31.37	2.18	0.00	26.55
Average			2.32 ± 0.23		27.07 ± 1.9

Surface contamination layer thickness	26 Å
Surface contamination layer refractive index	2.32
Substrate real refractive index	3.847
Substrate imaginary refractive index	−0.217

Angle (deg)	Δ	ψ	n_r	t
70	150.76	11.42	1.58	93.45
67.5	158.88	14.85	1.57	94.40
65	163.66	17.83	1.91	96.85
62.5	166.72	20.84	1.60	92.40
60	168.90	23.43	1.63	91.40
57.5	170.76	25.75	1.61	90.80
55	172.09	27.61	1.56	93.80
52.5	173.21	29.76	1.55	93.90
50	174.08	31.47	1.64	90.05

Silicon oxide (SiO₂) layer thickness	97 Å
Silicon oxide layer index	1.49
Inner layer (SiO_x) thickness	6 Å
Inner layer (SiO_x) index	2.50
Substrate index real part	3.858
Substrate index imaginary part	−0.003

Angle (deg)	Δ	ψ	n_r	t
70	9.18	42.67	1.99	924.5
67.5	12.21	42.14	2.00	924.5
65	15.92	41.48	2.00	924.0
62.5	20.53	40.74	2.00	924.0
60	26.25	39.81	2.00	924.0
57.5	32.97	38.68	2.00	924.0
55	41.10	37.45	2.00	924.0
52.5	50.54	36.13	2.00	924.0
50	61.01	34.94	2.00	923.5

Silicon nitride film index	2.000	2.000
Silicon nitride film thickness (Å)	925.9	924.3
Inner layer film index	0	2.40
Inner layer film thickness (Å)	0	1.9
Silicon substrate real index	3.866	3.866
Silicon substrate imaginary index	−0.017	−0.017
Multiple angle convergence level	0.083	0.985
Comments	Model with Si₃N₄ film and substrate only	Model with Si₃N₄ film and inner layer

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Applied Optics