Ion-beam-assisted deposition of thin films
Applied Optics, Vol. 22, Issue 1, pp. 178-184 (1983)
http://dx.doi.org/10.1364/AO.22.000178
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Abstract
Some effects on the properties of electron-beam evaporated thin films produced by ion bombardment of the growing film are reported. Substantial increases in the packing densities of SiO2, TiO2, and ZrO2 films have been produced as measured by the reduction in the adsorption of moisture when the films are exposed to a humid atmosphere. In a ZrO2–SiO2 multilayer interference filter, changes in the wavelength of the peak transmittance on exposure to the atmosphere have been reduced from 8 nm for films deposited without ion bombardment to <1 nm for ion-beam-assisted films.
Citation
P. J. Martin, H. A. Macleod, R. P. Netterfield, C. G. Pacey, and W. G. Sainty, "Ion-beam-assisted deposition of thin films," Appl. Opt. 22, 178-184 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-1-178
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