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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 22, Iss. 16 — Aug. 15, 1983
  • pp: 2492–2494

Temperature effects in AgGaS2 nonlinear devices

G. C. Bhar, D. K. Ghosh, P. S. Ghosh, and D. Schmitt  »View Author Affiliations


Applied Optics, Vol. 22, Issue 16, pp. 2492-2494 (1983)
http://dx.doi.org/10.1364/AO.22.002492


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Abstract

Refractive indices of AgGaS2 crystal are measured at different temperatures using the classical minimum deviation technique and are fitted in appropriate dispersion relations. The variation of pump laser wavelength for noncritical upconversion of signal at 10.6 μm with the change in crystal temperature has been verified using the above data. Temperature tunable infrared generation by noncritically phase-matched difference-frequency mixing has been predicted from 3 to 18 μm.

© 1983 Optical Society of America

History
Original Manuscript: January 29, 1983
Published: August 15, 1983

Citation
G. C. Bhar, D. K. Ghosh, P. S. Ghosh, and D. Schmitt, "Temperature effects in AgGaS2 nonlinear devices," Appl. Opt. 22, 2492-2494 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-16-2492

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