Reversible optical storage on a low-doped Te-based chalcogenide film with a capping layer
Applied Optics, Vol. 22, Issue 20, pp. 3165-3168 (1983)
http://dx.doi.org/10.1364/AO.22.003165
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Abstract
A reversible optical storage medium with more than 4 × 104 write/erase cycles has been realized using a low-doped Te film of composition Te96.8As3.0Ge0.2 encapsulated by a thick capping layer. A number of properties relevant to its storage application were also determined experimentally: the sensitivity range for writing (0.3–4 nJ) and erasing (34–40 nJ), the contrast of the readout signal (2:1), the limit for the erasing time (≈10 µsec), the bit permanence (3 weeks), and the readout signal behavior during writing and erasing.
© 1983 Optical Society of America
Citation
P. C. Clemens, "Reversible optical storage on a low-doped Te-based chalcogenide film with a capping layer," Appl. Opt. 22, 3165-3168 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-20-3165
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