Infrared optical properties of electron-beam evaporated silicon oxynitride films
Applied Optics, Vol. 22, Issue 20, pp. 3204-3206 (1983)
http://dx.doi.org/10.1364/AO.22.003204
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Abstract
The complex dielectric function of SiO0.6N0.2 coatings, produced by reactive electron-beam deposition, was evaluated in the 5–50-µm range. The composition was determined by Rutherford backscattering spectrometry. The IR optical properties of the films make them well suited for radiative cooling applications.
© 1983 Optical Society of America
Citation
T. S. Eriksson and C. G. Granqvist, "Infrared optical properties of electron-beam evaporated silicon oxynitride films," Appl. Opt. 22, 3204-3206 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-20-3204
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